An electronic structure for a-ZnSe

1977 ◽  
Vol 55 (19) ◽  
pp. 1641-1647 ◽  
Author(s):  
P. K. Lim ◽  
D. E. Brodie
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Room Temperature ◽  
Amorphous Material ◽  
Amorphous Semiconductor ◽  
Drift Mobility ◽  
Type Model ◽  
Electrical And Optical Properties ◽  
Energy Level Scheme ◽  
Consistent Manner

Some electrical and optical properties for a-ZnSe have been studied and the results have been analysed in a consistent manner with the help of a Mott-type model for an amorphous semiconductor. Mature samples are reproducible and for these an energy level scheme is obtained. Many experiments are required to characterize an amorphous material and hence we have presented the results for dc conductivity, photoconductivity, optical absorption, thermoelectric power, ac conductivity, and drift mobility experiments for this material. a-ZnSe is n-type, with the Fermi level near the middle of the mobility gap. Drift mobilities are dispersive and have values of the order of 10−6 cm2 V−1 s−1 at room temperature.

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Electrical and Optical Properties of Silicone Oil/Carbon Nanotube Nanocomposites

2021 ◽  
Vol 21 (4) ◽  
pp. 2185-2195
Author(s):  
Jeferson Matos Hrenechen ◽  
Celso de Araujo Duarte ◽  
Ney Pereira Mattoso Filho ◽  
Evaldo Ribeiro
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Conduction Mechanism ◽  
Silicone Oil ◽  
Optical Transmittance ◽  
Liquid Matrix ◽  
Electrical And Optical Properties ◽  
Multiwalled Carbon ◽  
Liquid Matrices ◽  
The Matrix

The present work describes the preparation and the investigation of the room temperature electrical and optical properties of a series of liquid nanocomposites (lnC) prepared with different concentrations of multiwalled carbon nanotubes (MWCNT) in a variety of liquid matrices: glycerin, Vaseline, glucose, propylene glycol and silicone oil (SIO). Special attention is deserved to the SIO matrix, owing to its convenient electrical properties for our purposes. We verified that a small percent fraction of MWCNT dispersed along the SIO matrix is capable of improving the electrical conductivity of the matrix by orders of magnitude, indicating that the MWCNT strongly participates in the electrical conduction mechanism. Also, the application of an external electric field to this lnC resulted in large changes in the optical transmittance, that were interpreted as a consequence of the fieldinduced MWCNT alignment into the liquid matrix. The characteristics of such a new category of nanocomposite in the liquid state suggest further studies.

Structural, electrical and optical properties of boron doped ZnO thin films using LSMCD method at room temperature

2009 ◽  
Vol 97 (4) ◽  
pp. 821-828 ◽  
Author(s):  
Gilho Kim ◽  
Jungsik Bang ◽  
Yunseok Kim ◽  
S. K. Rout ◽  
Seong Ihl Woo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Boron Doped ◽  
Doped Zno

Electrical resistivity and photoluminescence of lead iodide crystals

2007 ◽  
Vol 61 (1) ◽  
Author(s):  
M. Matuchová ◽  
K. Žďánský ◽  
M. Svatuška ◽  
J. Zavadil ◽  
O. Procházková
Keyword(s):  
Electrical Resistivity ◽  
Optical Properties ◽  
Room Temperature ◽  
Direct Synthesis ◽  
Zone Melting ◽  
Lead Iodide ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Low Temperature Photoluminescence

AbstractDirect synthesis of lead iodide, a promising material for X-ray and γ detectors operating at room temperature, was developed and optimized. The influence of admixture of rare earth elements Ce, Ho, Gd, Yb, Er, and Tb in concentrations 0.05–0.5 at. % on the quality of prepared PbI2 was investigated. Zone melting was employed in order to increase the lead iodide purity. Electrical and optical properties of PbI2 samples were assessed on the basis of the measurement of electrical resistivity and low-temperature photoluminescence. The electrical resistivity of synthesized samples varied from 109 Ω cm to 1011 Ω cm and occasionally it was increased up to 1013 Ω cm.

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