The Orbital Average of the Conduction Electron g Factor

1973 ◽  
Vol 51 (3) ◽  
pp. 368-371 ◽  
Author(s):  
P. M. Holtham
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Conduction Electron ◽  
G Factor

An expression has been derived that relates the orbital average of the g factor measured in the de Haas–van Alphen effect to the local gk values computed from any theoretical model for the band structure.

Electronic Properties of Bismuth Nanowires

2001 ◽  
Vol 679 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Oded Rabin ◽  
Marcie R. Black ◽  
Gene Dresselhaus ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Bismuth Nanowires ◽  
Bi Nanowire ◽  
Anodic Alumina Templates

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

Temperature renormalization of the conduction electron g factor in silicon

2013 ◽  
Vol 47 (1) ◽  
pp. 169-173 ◽  
Author(s):  
A. A. Konakov ◽  
V. A. Burdov ◽  
A. A. Ezhevskii ◽  
A. V. Soukhorukov ◽  
D. V. Guseinov ◽  
...  
Keyword(s):  
Conduction Electron ◽  
G Factor

A problem of the effective g-factor in the n-HgTe∕Cd[sub x]Hg[sub 1−x]Te quantum well with inverted band structure

2011 ◽  
Author(s):  
M. V. Yakunin ◽  
A. V. Suslov ◽  
S. M. Podgornykh ◽  
S. A. Dvoretsky ◽  
N. N. Mikhailov ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
G Factor

Determination of the sign of the conduction-electron g factor in semiconductor quantum wells by means of the Hanle effect and spin-quantum-beat techniques

1997 ◽  
Vol 39 (4) ◽  
pp. 681-685 ◽  
Author(s):  
V. K. Kalevich ◽  
B. P. Zakharchenya ◽  
K. V. Kavokin ◽  
A. V. Petrov ◽  
P. Le Jeune ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Electron ◽  
Quantum Beat ◽  
G Factor ◽  
Semiconductor Quantum Wells ◽  
Hanle Effect ◽  
Spin Quantum

The effect of the free-electron term on the band structure and Lande g-factor of Cd3As2

1986 ◽  
Vol 19 (17) ◽  
pp. 3151-3162 ◽  
Author(s):  
H El Alaoui Lamrani ◽  
M J Aubin ◽  
L G Caron
Keyword(s):  
Band Structure ◽  
Free Electron ◽  
G Factor ◽  
Electron Term

Thermoelectric Properties of Bi1-xSbx Nanowire Arrays

2001 ◽  
Vol 691 ◽  
Author(s):  
Yu-Ming Lin ◽  
Stephen B. Cronin ◽  
Oded Rabin ◽  
Jackie Y. Ying ◽  
Mildred S. Dresselhaus
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Seebeck Coefficient ◽  
Transport Property ◽  
Field Dependence ◽  
Nanowire Arrays ◽  
Temperature Dependent ◽  
Thermoelectric Transport ◽  
Alloy Nanowires ◽  
Different Diameters

ABSTRACTWe present here a thermoelectric transport property study of Bi1−xSbx alloy nanowires embedded in a dielectric matrix. Temperature-dependent resistance measurements exhibit nonmonotonic trends as the antimony mole fraction (x) increases, and a theoretical model is presented to explain the features that are related to the unusual band structure of Bi1−xSbx systems. Seebeck coefficient measurements are performed on nanowires with different diameters and compositions, showing enhanced thermopower over bulk Bi. The magneto-Seebeck coefficient of these nanowires also exhibits an unusual field dependence that is absent in bulk samples.

Conduction electron g-factor measurements in Au using the de Haas-van Alphen effect

1975 ◽  
Vol 20 (5-6) ◽  
pp. 655-675 ◽  
Author(s):  
G. W. Crabtree ◽  
L. R. Windmiller ◽  
J. B. Ketterson
Keyword(s):  
Conduction Electron ◽  
G Factor

Effects of Conduction Electron Band Structure on Transport of Quantum Dot Systems

2003 ◽  
Vol 20 (5) ◽  
pp. 717-720 ◽  
Author(s):  
Yang Kai-Hua ◽  
Song Bo ◽  
Tian Guang-Shan ◽  
Wang Yu-Peng ◽  
Han Ru-Shan ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Band Structure ◽  
Conduction Electron ◽  
Electron Band ◽  
Electron Band Structure ◽  
Conduction Electron Band

Fabrication and Transport Properties of Te-Doped Bi Nanowire Arrays

1999 ◽  
Vol 582 ◽  
Author(s):  
Y. M. Lin ◽  
X. Sun ◽  
S. B. Cronin ◽  
Z. Zhang ◽  
J. Y. Ying ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Nanowire Arrays ◽  
Injection Technique ◽  
Pressure Injection ◽  
Theoretical Predictions ◽  
Bi Nanowire ◽  
Anodic Alumina Templates

ABSTRACTTe-doped Bi nanowires with a 40 nm wire diameter have been successfully synthesized in anodic alumina templates by the pressure injection technique. Due to the unique semimetal-semiconductor transition that occurs in Bi nanowires, these systems exhibit a rather different temperature dependence in transport properties from their bulk counterparts. An improved theoretical model of this unique 1D nanowire system is developed based on the band structure of bulk bismuth. The temperature dependence of resistance for Bi nanowire arrays have been studied experimentally for various Te dopant concentrations and the results are compared with theoretical predictions.

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