Low-temperature electrical resistivity and magnetic susceptibility of dilute Mg–Ce alloys

1970 ◽  
Vol 48 (11) ◽  
pp. 1283-1287 ◽  
Author(s):  
F. T. Hedgcock ◽  
B. Petrie
Keyword(s):  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Low Temperature ◽  
Fermi Level ◽  
Magnesium Alloys ◽  
Conduction Electron ◽  
Room Temperature ◽  
Impurity Scattering ◽  
Cerium Ion ◽  
Normal Potential

The electrical resistivity of a series of magnesium alloys containing from 300 to 1041 parts per million of gadolinium has been measured from 4.2 °K to room temperature. No low-temperature anomalies have been observed and it is found that Matthiessen's rule is obeyed extremely well over the whole temperature range studied. The electrical resistivity and magnetic susceptibility measurements indicate that the cerium ion in magnesium is in a triply ionized state, and that the contribution to the resistivity can be almost totally accounted for by assuming normal potential impurity scattering. This suggests that the f level of cerium in magnesium lies well below the fermi level of magnesium and that there is very little s–f mixing between the f level of cerium of the conduction electron states of magnesium.

HEAT-TREATMENT INFLUENCE ON THE MAGNETIC AND ELECTRIC PROPERTIES OF HIGH-TcYBa2Cu3O7−δ SUPERCONDUCTOR

1996 ◽  
Vol 10 (20) ◽  
pp. 955-961
Author(s):  
LAUREAN HOMORODEAN ◽  
IULIU POP ◽  
ION BURDOI
Keyword(s):  
Heat Treatment ◽  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Superconducting Phase ◽  
Superconducting Transition ◽  
Temperature Dependences ◽  
Magnetic And Electric Properties ◽  
Very High

The changes in the temperature dependences of the magnetic susceptibility and the electrical resistivity of a very-high-T c superconducting YBa 2 Cu 3 O 7−δ sample during the thermal cycling between the liquid-nitrogen temperature and the room temperature are studied. Some singularities corresponding to the superconducting transition, the possible existence of a super-high-temperature superconducting phase and the migration of the oxygen atoms in the Cu-O chains are emphasized on these dependencies.

Electron Transport Properties of Aluminium Substituted CuTi Amorphous Alloys

1997 ◽  
Vol 11 (03) ◽  
pp. 303-313 ◽  
Author(s):  
A. K. Bhatnagar ◽  
G. Fritsch ◽  
D. G. Naugle ◽  
R. Haberkern ◽  
M. Kandlbinder ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Electron Transport ◽  
Low Temperature ◽  
Amorphous Alloys ◽  
Room Temperature ◽  
Quantum Corrections ◽  
Spin Orbit ◽  
Electron Transport Properties ◽  
Temperature Coefficient Of Resistivity ◽  
Scattering Time

Room temperature electrical resistivity (ρ), temperature coefficient of resistivity (α) and Hall coefficient (R H ) of ( Cu 1-y Ti y)1-x Al x amorphous alloys, where y=0.36, 0.50 and 0.64 and x=0, 0.05 and 0.10 are presented. The low temperature dependence of resistivity and magnetoresistivity of a-( Cu 0.36 Ti 0.64)1-x Al x are also presented and discussed qualitatively in terms of quantum corrections. It is found that the addition of Al in a- Cu 0.36 Ti 0.64 alloy decreases the spin-orbit scattering time τ so .

Structure Instability of Metallic Glass Zr50Cu40Al10 in Low Temperature

2007 ◽  
Vol 539-543 ◽  
pp. 2100-2105
Author(s):  
Takeshi Fukami ◽  
A. Nanbu ◽  
M. Fukatani ◽  
Daisuke Okai ◽  
Y. Akeno ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Electrical Resistivity ◽  
Wave Propagation ◽  
Low Temperature ◽  
Metallic Glass ◽  
Room Temperature ◽  
Sound Propagation ◽  
Abrupt Increase ◽  
Mechanical Resonance ◽  
Abrupt Decrease

In order to examine mechanical properties of a metallic glass Zr50Cu40Al10 in low temperature below room temperature, the temperature T dependence of mechanical resonance of ultrasonic wave are measured. The mechanical resonance frequency in an as-quenched sample shows an abrupt increase at 200K for longitudinal wave and 160 K for transverse wave with decreasing T. After this abrupt increase, the sound propagation cannot be detected below these temperatures but the wave propagation is restored with increasing T and there is an abrupt decrease at 260K for the both wave modes. The similar hysteresis is observed in temperature dependence of the electrical resistivity. These suggest a kind of structure instability of Zr50Cu40Al10 in low temperature region.

ON THE STRUCTURAL, THERMAL, ELECTRICAL, AND MAGNETIC PROPERTIES OF AuSn

1963 ◽  
Vol 41 (12) ◽  
pp. 2252-2266 ◽  
Author(s):  
J.-P. Jan ◽  
W. B. Pearson ◽  
A. Kjekshus ◽  
S. B. Woods
Keyword(s):  
Thermal Conductivity ◽  
Magnetic Properties ◽  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Air Temperature ◽  
Homogeneity Range ◽  
Room Temperature ◽  
Lattice Constants ◽  
Conduction Electrons ◽  
Electrical And Magnetic Properties

The Au1−xSn phase has a homogeneity range within the limits 50.0 and 50.5 at.% Sn. The lattice constants and observed densities vary between the limits:[Formula: see text]The thermal conductivity, electrical resistivity, and absolute thermoelectric power of oriented single crystals of Au1−xSn have been measured between 2.5° K and room temperature. The results exhibit pronounced anisotropies. Measurements of the magnetic susceptibility between liquid air temperature and 650–750° K are also reported for three different Au1−xSn alloys.The various results are discussed, and some speculations are presented regarding the number of conduction electrons in AuSn.

Thermoelectric Properties of the Pseudogap Fe2VAl System

2004 ◽  
Vol 449-452 ◽  
pp. 909-912 ◽  
Author(s):  
Yoichi Nishino
Keyword(s):  
Electrical Resistivity ◽  
Electronic Structure ◽  
Low Temperature ◽  
Seebeck Coefficient ◽  
Room Temperature ◽  
Sharp Decrease ◽  
Large Power ◽  
Large Enhancement ◽  
Level Shifts ◽  
Temperature Resistivity

While the Heusler-type Fe2VAl compound exhibits a semiconductor-like behavior in electrical resistivity, doping of quaternary elements causes a sharp decrease in the low-temperature resistivity ρ and a large enhancement in the Seebeck coefficient S. Substantial enhancement in S can be explained on the basis of the electronic structure where the Fermi level shifts slightly from the center of a pseudogap either up- or downward depending on doping. In particular, a slight substitution of Si for Al leads to a large power factor (P = S2/ρ) of 5.5×10-3W/m K2at around room temperature.

Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport

2004 ◽  
Vol 815 ◽  
Author(s):  
M. Yoganathan ◽  
A. Gupta ◽  
E. Semenas ◽  
E. Emorhokpor ◽  
C. Martin ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Room Temperature ◽  
Large Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Intrinsic Defect ◽  
Defect Level ◽  
Low Temperature Photoluminescence

AbstractSemi-insulating (SI) 6H-SiC boules up to 110mm in diameter have been grown by Physical Vapor Transport (PVT). SI properties have been achieved by vanadiumc compensation, which resulted in the room temperature electrical resistivity exceeding 2×1011ωcm. Low temperature photoluminescence (LTPL) data shows the presence of the deep intrinsic defect level UD-1 in addition to V4+. The nitrogen-bound exciton (NBE) luminescence is weak in heavily vanadium compensated 6H-SiC.

scholarly journals Low-temperature electrical resistivity and thermal conductivity of binary magnesium alloys

2014 ◽  
Vol 80 ◽  
pp. 288-295 ◽  
Author(s):  
Tao Ying ◽  
Hang Chi ◽  
Mingyi Zheng ◽  
Zitong Li ◽  
Ctirad Uher
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Low Temperature ◽  
Magnesium Alloys

Interaction of Thin Ga Overlayer with InP(110): a Photoemission Study

1988 ◽  
Vol 143 ◽  
Author(s):  
R. Cao ◽  
K. Miyano ◽  
T. Kendelewicz ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Replacement Reaction ◽  
High Coverage ◽  
Fermi Level Pinning ◽  
Different Temperatures ◽  
Photoemission Study ◽  
Low Coverage

AbstractPhotoemission study of the Ga/InP(110) interface, in particular at the In 4d cooper minimum (CM) reveals that the growth of the deposited Ga on InP(110) at room temperature (RT) has two modes: chemisorption at low coverage and metallic island formation at high coverage, whereas the Ga overlayer is much more uniform at 80K low temperature (LT). A replacement reaction between Ga and InP is found to take place only underneath the Ga islands. Metal screening from the Ga islands is suggested to weaken the substrate bonds and enhance the replacement reaction. Distinct behavior of Fermi level pinning has been observed at different temperatures. This is correlated with the temperature dependence of the overlayer morphology as well as the interfacial reaction.

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