Conduction bands of GaxIn1–x Sb alloys

1969 ◽  
Vol 47 (22) ◽  
pp. 2553-2564 ◽  
Author(s):  
William M. Coderre ◽  
John C. Woolley
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Hall Coefficient ◽  
Solidus Temperature ◽  
Energy Separation ◽  
Trial And Error ◽  
Unknown Parameters ◽  
Alloy Scattering ◽  
Conduction Bands ◽  
Valence Bands

Measurements of Hall coefficient and electrical conductivity have been made on alloys of the system GaxIn1–xSb over a range of temperature from 100 °K up to 950 °K or to 20° below the solidus temperature of the particular specimen, whichever was the lower. These data have then been analyzed in terms of equations involving three conduction and two valence bands, the important unknown parameters in the equations being determined by a trial and error fitting technique. The results give the variation of the energy separation from the valence band of the [Formula: see text] and [Formula: see text] conduction band minima, as well as the main (000) band gap as a function of the composition and temperature. Also determined from the analysis are the (000) electron mobilities, which are found to vary linearly with composition, indicating that alloy scattering has negligible effect on the mobility values.

Conduction bands of GaxIn1−xAs and InAsxSb1−xalloys

1970 ◽  
Vol 48 (4) ◽  
pp. 463-469 ◽  
Author(s):  
William M. Coderre ◽  
John C. Woolley
Keyword(s):  
Electrical Conductivity ◽  
Band Structure ◽  
Valence Band ◽  
Conduction Band ◽  
High Temperatures ◽  
Hall Coefficient ◽  
Solidus Temperature ◽  
Energy Separation ◽  
Conduction Bands ◽  
Valence Bands

Measurements of Hall coefficient and electrical conductivity have been made on alloys of the systems GaxIn1−xAs and InAsxSb1−xover a range of temperature from 200 up to 950 °K or to 20° below the solidus temperature of the particular specimen, whichever was lower. These data have then been analyzed in terms of equations involving all the occupied conduction and valence bands in the manner described previously by Coderre and Woolley. The results give the variation of the energy separation from the valence band of the (000) conduction-band minimum as a function of the composition and temperature for both alloy systems. For a certain range of x in the InAsxSb1−x alloys, a transition to the gray-tin band structure is observed at high temperatures.

Electrical properties of InAsxSb1−x alloys

1968 ◽  
Vol 46 (10) ◽  
pp. 1207-1214 ◽  
Author(s):  
William M. Coderre ◽  
John C. Woolley
Keyword(s):  
Electrical Conductivity ◽  
High Temperature ◽  
Electrical Properties ◽  
Optical Absorption ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Conductivity Data ◽  
Absorption Data ◽  
Alloy Scattering ◽  
Electrical Conductivity Data

Measurements have been made of the high-temperature Hall coefficient, electrical conductivity, and thermoelectric power in polycrystalline n-type samples of InAsxSb1−x alloys of extrinsic carrier concentration ~1017/cm3. From the Hall-coefficient data, values of the extrapolated absolute-zero band gap E00 have been determined over the whole alloy range, the thermoelectric power results being used to provide a correction factor to allow for effects of degeneracy. In all cases this correction was found to be very small. The resultant values of E00 for the alloys are somewhat lower than those obtained previously from optical absorption data and show a minimum of 0.17 eV at x ~0.4. From the electrical conductivity data, values of electron mobility μc have been obtained as a function of temperature T and composition x. At all temperatures in the range 0–500 °C, μc is found to vary linearly with x, indicating that the effects of alloy scattering are negligible. For each value of x, μc is found to satisfy the relation μc = μ0 exp (−T/θ), and the variation of θ with x has been determined.

Valence band engineering and thermoelectric performance optimization in SnTe by Mn-alloying via a zone-melting method

2015 ◽  
Vol 3 (39) ◽  
pp. 19974-19979 ◽  
Author(s):  
Jun He ◽  
Xiaojian Tan ◽  
Jingtao Xu ◽  
Guo-Qiang Liu ◽  
Hezhu Shao ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Band Gap ◽  
Performance Optimization ◽  
Heavy Hole ◽  
Zone Melting ◽  
Energy Separation ◽  
Melting Method ◽  
Band Engineering ◽  
Valence Bands ◽  
P Type

Mn alloying in SnTe increases the band gap and decreases the energy separation between the light and heavy hole valence bands, leading to a significant enhancement in the Seebeck coefficient. The maximum ZT of ~1.25 is found at 920 K for p-type SnMn0.07Te.

Material Properties of Sipos Films Prepared by XeCl Excimer Laser Annealing of a-Si:Nx Films

1996 ◽  
Vol 424 ◽  
Author(s):  
Hong-Seok Choi ◽  
Jae-Hong Jun ◽  
Keun-Ho Jang ◽  
Min-Koo Han
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Vapor Deposition ◽  
Material Properties ◽  
Laser Annealing ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Excimer Laser Annealing ◽  
Maximum Value

AbstractThe material properties of laser-annealed a-Si:Nx films were investigated. The a-Si:Nx films for laser-annealing were deposited by rf plasma enhanced chemical vapor deposition (PECVD) with NH3 and SiH4 gas mixtures. At the 0.35 of NH3/SiH4 ratio, the optical band-gap was abruptly increased to 2.82 eV from 2.05 eV by laser-annealing which indicates that Si-N bonding comes to be notable at that ratio. The electrical conductivity showed the maximum value of 4× 10-6 S/cm at the 0.11 of NH3/SiH4 ratio where the grain growth and the increase of Si-N bonding are optimized for the enhancement of electrical conductivity. The σP/σD ratio which is related to the defects states for photo generation centers was decreased with increasing NH 3/SiH 4 ratio. Our experimental data showed that the optical band gap and electrical conductivity of laserannealed a-Si:Nx films were dominantly affected by the NH3/SiH4 ratio at the 250 mJ/cm2 of laser-annealing energy density.

Band Structure and Thermoelectric Properties of Ni(x)Zn(1-x)Fe2O4

2021 ◽  
Vol 317 ◽  
pp. 28-34
Author(s):  
Joon Hoong Lim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Xrd Analysis ◽  
Valence Band Maximum ◽  
Solid State Method ◽  
Ni Content

Thermoelectric materials has made a great potential in sustainable energy industries, which enable the energy conversion from heat to electricity. The band structure and thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 have been investigated. The bulk pellets were prepared from analytical grade ZnO, NiO and Fe2O3 powder using solid-state method. It was possible to obtain high thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 by controlling the ratios of dopants and the sintering temperature. XRD analysis showed that the fabricated samples have a single phase formation of cubic spinel structure. The thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 pellets improved with increasing Ni. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 (x = 0.0) is (0.515 x10-3 Scm-1). The band structure shows that ZnxCu1-xFe2O4 is an indirect band gap material with the valence band maximum (VBM) at M and conduction band minimum (CBM) at A. The band gap of Ni(x)Zn(1-x)Fe2O4 increased with increasing Ni content. The increasing band gap correlated with the lower electrical conductivity. The thermal conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The presence of Ni served to decrease thermal conductivity by 8 Wm-1K-1 over pure samples. The magnitude of the Seebeck coefficient for Ni(x)Zn(1-x)Fe2O4 pellets increased with increasing amounts of Ni. The figure of merit for Ni(x)Zn(1-x)Fe2O4 pellets and thin films was improved by increasing Ni due to its high Seebeck coefficient and low thermal conductivity.

Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

1997 ◽  
Vol 498 ◽  
Author(s):  
K. F. Chan ◽  
X.-A. Zhao ◽  
C. W. Ong
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Film Structure ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Ion Beam Deposition ◽  
Valence Bands ◽  
Beam Deposition

ABSTRACTCNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

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