The conduction processes in silicon nitride

1968 ◽  
Vol 46 (22) ◽  
pp. 2509-2516 ◽  
Author(s):  
E. J. M. Kendall
Keyword(s):  
Activation Energy ◽  
Silicon Nitride ◽  
Electrical Conduction ◽  
Thermal Activation ◽  
Thermal Activation Energy ◽  
Field Ionization ◽  
Characteristic Constant

The electrical conduction processes through silicon nitride are examined and discussed. Three processes were found to occur: Frenkel–Poole emission, field ionization, and trap hopping. The characteristic constant for the field ionization was found to be lower than expected (~5 × 106 V cm−1), and the thermal activation energy for the trap hopping was between 0.08 and 0.10 eV. The Frenkel–Poole effect indicated trap depths varying from 0.50 to 0.85 eV for various devices, and was more complicated than previously reported. All of the processes were bulk limited. Approximate values of m*/m and the mobility at 300 °K were found to be 0.20 and 0.13 cm2/V s respectively.

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

Transport and Meyer-Neldel Rule in Microcrystalline Silicon Films

2005 ◽  
Vol 862 ◽  
Author(s):  
Steve Reynolds ◽  
Vlad Smirnov ◽  
Friedhelm Finger ◽  
Charlie Main ◽  
Reinhard Carius
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Thermal Activation ◽  
Prolonged Exposure ◽  
Oxygen Adsorption ◽  
Thermal Activation Energy ◽  
Silicon Films ◽  
Transport Mechanisms ◽  
Microcrystalline Silicon ◽  
Porous Films

AbstractChanges in the electrical conductivity of thin (< 300 nm) silicon films following prolonged exposure to atmosphere, are reported. Both reversible (by annealing at 150 °C under vacuum) and irreversible (annealing-resistant) effects are found to occur, which are larger in thinner films. The conductivity prefactor and thermal activation energy obey the Meyer-Neldel rule, although detailed behaviour depends on film thickness and microstructure. Irreversible changes may result from oxidation of thinner, more porous films, with water and/or oxygen adsorption and desorption responsible for reversible changes. The need to identify and account for these effects when discussing and formulating transport mechanisms in these materials is underlined.

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