Orbit–orbit interaction in positive ions of transition elements

1968 ◽  
Vol 46 (12) ◽  
pp. 1469-1471 ◽  
Author(s):  
Jon Thorhallsson ◽  
Serafin Fraga
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Transition Elements ◽  
Spin Orbit Interaction ◽  
Hartree Fock ◽  
Positive Ions ◽  
Parent State ◽  
Order Of Magnitude

The orbit–orbit interaction in a number of positive ions of transition elements has been evaluated from analytical Hartree–Fock functions. This interaction is the same for the various states arising from a given configuration and with the same parent state and, in many cases, of an order of magnitude comparable to the spin–orbit interaction.

scholarly journals Spin-orbit interaction in Hartree-Fock calculations

1999 ◽  
Vol 112 (10) ◽  
pp. 1117-1132 ◽  
Author(s):  
A. R. Bautista ◽  
G. Co’ ◽  
A. M. Lallena
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Hartree Fock

Fine Structure Intervals in Transition Elements

1975 ◽  
Vol 53 (21) ◽  
pp. 2421-2427 ◽  
Author(s):  
Jacek Karwowski ◽  
K. M. S. Saxena ◽  
Serafin Fraga
Keyword(s):  
Fine Structure ◽  
Ground State ◽  
Orbit Interaction ◽  
Matrix Elements ◽  
Transition Elements ◽  
Hartree Fock ◽  
Positive Ions ◽  
Transition Series ◽  
The Matrix ◽  
New Formulation

A new formulation for the evaluation of the matrix elements of the spin-own orbit interaction in many-electron atoms has been applied to the evaluation of the interaction matrices for pN, dN, and fN configurations, using functions that are simultaneous eigenfunctions of the operators J2, L2,S2, and.Jz; the complete results are available as indicated in the text. Using this formulation, the fine structure intervals for the ground states of the neutral atoms and the first three positive ions of the elements of the three transition series have been calculated within the framework of the monoconfigurational approximation, including the electrostatic and spin-own orbit interaction between the states arising from the configuration under consideration. In each case, the spin–orbit parameter and the set of Slater–Condon integrals, obtained from the numerical Hartree–Fock function for the ground state, were used.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines

scholarly journals Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Miguel J. Carballido ◽  
Christoph Kloeffel ◽  
Dominik M. Zumbühl ◽  
Daniel Loss
Keyword(s):  
Cross Sections ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Low Symmetry

scholarly journals Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuanjie Chen ◽  
Shaoyun Huang ◽  
Dong Pan ◽  
Jianhong Xue ◽  
Li Zhang ◽  
...  
Keyword(s):  
Layer Structure ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Device Layer ◽  
Physical Origin ◽  
Quantum Devices ◽  
Spin Orbit Interaction ◽  
Topological Quantum ◽  
Narrow Bandgap ◽  
Dual Gate

AbstractA dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

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