The dependence of the sputtering ratio of polycrystalline metals on the angle of ion incidence on the target

1968 ◽  
Vol 46 (6) ◽  
pp. 779-782 ◽  
Author(s):  
I. N. Evdokimov ◽  
V. A. Molchanov
Keyword(s):  
Simple Model ◽  
Beam Energy ◽  
Ion Beam ◽  
Target Surface ◽  
Close Packing ◽  
Experimental Results ◽  
Polycrystalline Metals

The sputtering ratio of polycrystalline metals as well as the amount of ion beam energy reflected from the target surface showed angular behavior which was not monotonic at large angles of incidence. The simple model which takes into account "close-packing" at the target surface and, consequently, more or less ordered shadowing of the surface atoms seems to describe the experimental results qualitatively.

Time resolved diagnostic of ion beam energy distribution function for plasma thrusters

1997 ◽  
Author(s):  
Christelle Philippe ◽  
Claude Laure ◽  
Andre Bouchoule ◽  
Christelle Philippe ◽  
Claude Laure ◽  
...  
Keyword(s):  
Distribution Function ◽  
Energy Distribution ◽  
Beam Energy ◽  
Ion Beam ◽  
Energy Distribution Function ◽  
Time Resolved ◽  
Plasma Thrusters

Anomalous Scaling of the Ion Beam Energy in the Current Sheet

JETP Letters ◽  
2020 ◽  
Vol 111 (4) ◽  
pp. 205-209
Author(s):  
R. A. Kovrazhkin ◽  
A. L. Glazunov ◽  
G. A. Vladimirova
Keyword(s):  
Current Sheet ◽  
Beam Energy ◽  
Ion Beam ◽  
Anomalous Scaling

scholarly journals An Experiment-Based Profile Function for the Calculation of Damage Distribution in Bulk Silicon Induced by a Helium Focused Ion Beam Process

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2306 ◽  
Author(s):  
Qianhuang Chen ◽  
Tianyang Shao ◽  
Yan Xing
Keyword(s):  
Beam Energy ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Single Crystalline Silicon ◽  
Nanostructure Fabrication ◽  
Profile Function ◽  
Single Crystalline ◽  
Prediction Function ◽  
Wide Range

The helium focused ion beam (He-FIB) is widely used in the field of nanostructure fabrication due to its high resolution. Complicated forms of processing damage induced by He-FIB can be observed in substrates, and these damages have a severe impact on nanostructure processing. This study experimentally investigated the influence of the beam energy and ion dose of He-FIB on processing damage. Based on the experimental results, a prediction function for the amorphous damage profile of the single-crystalline silicon substrate caused by incident He-FIB was proposed, and a method for calculating the amorphous damage profile by inputting ion dose and beam energy was established. Based on one set of the amorphous damage profiles, the function coefficients were determined using a genetic algorithm. Experiments on single-crystalline silicon scanned by He-FIB under different process parameters were carried out to validate the model. The proposed experiment-based model can accurately predict the amorphous damage profile induced by He-FIB under a wide range of different ion doses and beam energies.

scholarly journals Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi2nanoparticles

2013 ◽  
Vol 46 (6) ◽  
pp. 1796-1804 ◽  
Author(s):  
Rossano Lang ◽  
Alan S. de Menezes ◽  
Adenilson O. dos Santos ◽  
Shay Reboh ◽  
Eliermes A. Meneses ◽  
...  
Keyword(s):  
Strain Distribution ◽  
Beam Energy ◽  
Lattice Strain ◽  
Ion Beam ◽  
Silicon Layer ◽  
Semiconductor Substrate ◽  
X Ray ◽  
Out Of Plane ◽  
Diffraction Peaks ◽  
Surface Diffraction

Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi2nanoparticles, were analyzed and resolved as a function of the synchrotron X-ray beam energy by using ω:φ mappings of the ({\overline 1}11) and (111) Bragg-surface diffraction peaks. The nanoparticles, synthesized by ion-beam-induced epitaxial crystallization of Fe+-implanted Si(001), were observed to have different orientations and morphologies (sphere- and plate-like nanoparticles) within the implanted/recrystallized region. The results show that the shape of the synthesized material singularly affects the surrounding Si lattice. The lattice strain distribution elucidated by the nonconventional X-ray Bragg-surface diffraction technique clearly exhibits an anisotropic effect, predominantly caused by plate-shaped nanoparticles. This type of refined detection reflects a key application of the method, which could be used to allow discrimination of strains in distorted semiconductor substrate layers.

scholarly journals Modelling of ‘sub-atomic’ contrast resulting from back-bonding on Si(111)-7×7

2016 ◽  
Vol 7 ◽  
pp. 937-945 ◽  
Author(s):  
Adam Sweetman ◽  
Samuel P Jarvis ◽  
Mohammad A Rashid
Keyword(s):  
Simple Model ◽  
Experimental Results ◽  
Striking Similarity ◽  
Orbital Structure ◽  
Dangling Bond ◽  
Lennard Jones ◽  
Detailed Explanation ◽  
Afm Imaging ◽  
Back Bonding ◽  
Molecular Contrast

It has recently been shown that ‘sub-atomic’ contrast can be observed during NC-AFM imaging of the Si(111)-7×7 substrate with a passivated tip, resulting in triangular shaped atoms [Sweetman et al. Nano Lett. 2014, 14, 2265]. The symmetry of the features, and the well-established nature of the dangling bond structure of the silicon adatom means that in this instance the contrast cannot arise from the orbital structure of the atoms, and it was suggested by simple symmetry arguments that the contrast could only arise from the backbonding symmetry of the surface adatoms. However, no modelling of the system has been performed in order to understand the precise origin of the contrast. In this paper we provide a detailed explanation for ‘sub-atomic’ contrast observed on Si(111)-7×7 using a simple model based on Lennard-Jones potentials, coupled with a flexible tip, as proposed by Hapala et al. [Phys. Rev. B 2014, 90, 085421] in the context of interpreting sub-molecular contrast. Our results show a striking similarity to experimental results, and demonstrate how ‘sub-atomic’ contrast can arise from a flexible tip exploring an asymmetric potential created due to the positioning of the surrounding surface atoms.

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