Optical energy gap variation in GaxIn1−x As alloys

1968 ◽  
Vol 46 (2) ◽  
pp. 157-159 ◽  
Author(s):  
John C. Woolley ◽  
Mathew B. Thomas ◽  
Alan G. Thompson
Keyword(s):  
Thermoelectric Power ◽  
Fermi Energy ◽  
Room Temperature ◽  
Energy Gap ◽  
Empirical Equations ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Good Agreement ◽  
Gap Values

Room-temperature optical energy-gap values have been determined for GaxIn1−x As alloys, and have been corrected, where necessary, for the Burstein effect by finding Fermi energy values from thermoelectric power data. The results show good agreement with the empirical equations given previously for mixed III–V alloys.

T(Z) diagram and optical energy gap values of (AgIn)2(1–z)(CdIn2)zTe4 alloys

1994 ◽  
Vol 144 (2) ◽  
pp. 311-316 ◽  
Author(s):  
R. Cadenas ◽  
M. Quintero ◽  
J. C. Woolley
Keyword(s):  
Energy Gap ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Gap Values

(Culn)J.(Agln)!/Mn2jTe:, Alloys: T(z) Phase Diagram and Optical Energy Gap Values

1989 ◽  
pp. 157-165
Author(s):  
M. Quintero ◽  
R . Tovar ◽  
M. Dhksi ◽  
J. Woolley
Keyword(s):  
Phase Diagram ◽  
Energy Gap ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Gap Values

T(z) Diagram and Optical Energy Gap Values of Zn1-zMnzGa2Se4 Alloys

1995 ◽  
Vol 115 (2) ◽  
pp. 416-419 ◽  
Author(s):  
M. Morocoima ◽  
M. Quintero ◽  
J.C. Woolley
Keyword(s):  
Energy Gap ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Gap Values

T(z) diagram and optical energy gap values of Cu2(1−z)MnzIn2Te4 alloys

1995 ◽  
Vol 224 (1) ◽  
pp. 93-96 ◽  
Author(s):  
A. Rivero ◽  
M. Quintero ◽  
M. Morocoima ◽  
J.C. Woolley
Keyword(s):  
Energy Gap ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Gap Values

T(z) diagram and optical energy gap values of Cd1−zMnzGa2Se4 alloys

1993 ◽  
Vol 22 (3) ◽  
pp. 297-301 ◽  
Author(s):  
E. Guerrero ◽  
M. Quintero ◽  
R. Tovar ◽  
T. Tinoco ◽  
J. González ◽  
...  
Keyword(s):  
Energy Gap ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Gap Values

Crystallographic properties and optical energy gap values for (CuIn)x(AgIn)yCd2zTe2alloys

1988 ◽  
Vol 63 (7) ◽  
pp. 2252-2256 ◽  
Author(s):  
Eunice Guerrero ◽  
Miguel Quintero ◽  
J. C. Woolley
Keyword(s):  
Energy Gap ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Gap Values

Crystallographic properties and optical energy gap values for (AgCd2In)p(CuIn)2yMn4zTe4 (p + y + z = 1) alloys

1988 ◽  
Vol 77 (1) ◽  
pp. 26-32 ◽  
Author(s):  
Miguel Quintero ◽  
Pedro Grima ◽  
Eunice Guerrero ◽  
Rafael Tovar ◽  
Gerardo S. Pérez ◽  
...  
Keyword(s):  
Energy Gap ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Gap Values

DEPENDENCE OF THE OPTICAL AND ELECTRICAL PROPERTIES OF CHEMICALLY ANNEALED VACUUM-DEPOSITED a-Si:H FILMS ON THE DEPOSITION RATE

2012 ◽  
Vol 27 (02) ◽  
pp. 1350015
Author(s):  
AHMED M. EL-NAGGAR
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Room Temperature ◽  
Energy Gap ◽  
Dark Conductivity ◽  
Optical Parameters ◽  
Optical And Electrical Properties ◽  
Optical Energy Gap ◽  
Optical Energy

The influence of the deposition rate of chemically annealed vacuum-deposited a-Si : H films on its optical and electrical properties was studied. The optical parameters were studied using spectrophotometric measurements of the film transmittance in the wavelength range 200–3000 nm. It was found that with increasing the silicon deposition rate from 0.09 to 0.23 nm/s, the refractive index, n, decreases from 3.78 to 3.45 at 1.5 μm, and the optical energy gap, Eg, decreases from 1.74 to 1.66 eV, while the Urbach parameter, ΔE, increases from 77 to 99 meV. The dark conductivity was measured at temperatures descending from 480 to 170 K. It was found that the room temperature dark conductivity values decreased from 1.11 × 10-6 (Ω⋅ cm )-1 to 2.08 × 10-10 (Ω⋅ cm )-1 with increasing the deposition rate from 0.09 to 0.23 nm/s respectively, while the activation energy Ea increased from 0.53 to 0.84 eV with increasing deposition rate. As a result, a good quality a-Si : H film with optical energy gap of 1.74 eV, Urbach parameter of 77 meV, dark conductivity of 1.11 × 10-6 (Ω⋅ cm )-1, and activation energy of 0.53 eV was successfully prepared at a low deposition rate of 0.09 nm/s.

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