LOW TEMPERATURE RECOVERY OF DEFORMED ZIRCONIUM

1966 ◽  
Vol 44 (12) ◽  
pp. 3241-3257 ◽  
Author(s):  
M. L. Swanson
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Oxygen Atom ◽  
Activation Energies ◽  
Recovery Stage ◽  
First Order ◽  
Temperature Recovery

The low-temperature recovery of the electrical resistivity increment Δρ0 produced by deformation of polycrystalline Zr at 4.2 °K was investigated. Particular attention was given to the large recovery stage occurring between 30° and 40 °K, which amounted to 30% of Δρ0 for Zr containing ~0.070 at. % oxygen, but only 6% of Δρ0 for Zr containing ~0.015 at. % oxygen. By means of isochronal and isothermal anneals, this recovery stage was shown to be due to several first-order annealing processes (with activation energies between 0.105 and 0.125 eV), which were attributed to defect-oxygen atom interactions. Additional recovery peaks were observed at 190 °K and 310 °K only for the lower purity Zr, whose recovery to 360 °K was approximately 80%.

A technique for resolving the low temperature recovery stage of magnesium

1970 ◽  
Vol 31 (10) ◽  
pp. 538-539 ◽  
Author(s):  
L.W. Elliso ◽  
T.N. O'Neal ◽  
R.L. Chaplin
Keyword(s):  
Low Temperature ◽  
Recovery Stage ◽  
Temperature Recovery

Recovery of electron-irradiated zirconium at low temperatures

1968 ◽  
Vol 46 (5) ◽  
pp. 321-324 ◽  
Author(s):  
H. H. Neely
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Electron Irradiation ◽  
Low Temperatures ◽  
Stage I ◽  
Resistivity Change ◽  
Low Oxygen ◽  
Defect Migration ◽  
Pair Annihilation ◽  
Temperature Recovery

The low-temperature recovery of the electrical resistivity of polycrystalline zirconium was measured after electron irradiation below 8 °K. The material used in this irradiation was the same low oxygen material (0.015 at.%) used by Swanson to study recovery after deformation at 4.2 °K. Substage IB was found to be only of the order of 4% of the irradiation-induced resistivity change, compared to ~6% observed by Swanson after deformation. Stage I (4.2 to 160 °K) in Zr contains six substages, while stage II (160 to 310 °K) contains only one substage after electron irradiation. While no study of kinetics was made, it seems likely that close pair-annihilation processes are responsible for the recovery spectrum below 118 °K and that longer-range defect migration occurs in the neighborhood of 140 °K.

EVANOHM

Alloy Digest ◽  
1960 ◽  
Vol 9 (4) ◽  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Temperature Coefficient ◽  
Base Alloy ◽  
Nickel Base Alloy ◽  
Temperature Coefficient Of Resistance ◽  
High Electrical Resistivity ◽  
Nickel Base

Abstract EVANOHM is a nickel-base alloy having low temperature coefficient of resistance and high electrical resistivity. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on joining. Filing Code: Ni-57. Producer or source: Wilbur B. Driver Company.

The kinetics of hydration of tricalcium silicate

1970 ◽  
Vol 48 (21) ◽  
pp. 3291-3299 ◽  
Author(s):  
K. G. McCurdy ◽  
B. P. Erno
Keyword(s):  
Reaction Mechanism ◽  
Intermediate Product ◽  
Activation Energies ◽  
Tricalcium Silicate ◽  
Rate Data ◽  
Large Excess ◽  
First Order ◽  
Kinetics Of ◽  
Subsequent Decomposition

An investigation has been made of the kinetics of hydration of tricalcium silicate at several temperatures in a large excess of water in the presence of various added ions. The rate data have been interpreted by a reaction mechanism which involves: (a) the first order hydration of tricalcium silicate to form an intermediate product, 1.5CaO•SiO2, which can react by two pathways, (b) the direct first order decomposition of intermediate, 1.5CaO•SiO2, to form lime and silica or (b′) complexing of intermediate with silica and subsequent decomposition to form lime and silica. This reaction mechanism predicts the rate of production of base during the hydration. The effect of various added ions is interpreted in terms of the proposed mechanism.Rate constants and activation energies for the various steps in the proposed mechanism are reported.

scholarly journals Macroscopic degeneracy and order in the 3D plaquette Ising model

2015 ◽  
Vol 29 (20) ◽  
pp. 1550109 ◽  
Author(s):  
Desmond A. Johnston ◽  
Marco Mueller ◽  
Wolfhard Janke
Keyword(s):  
Low Temperature ◽  
Magnetic Order ◽  
Finite Size ◽  
Temperature Phase ◽  
Finite Size Scaling ◽  
First Order ◽  
Magnetic Order Parameter ◽  
First Order Transition ◽  
Definition Of ◽  
Low Temperature Phase

The purely plaquette 3D Ising Hamiltonian with the spins living at the vertices of a cubic lattice displays several interesting features. The symmetries of the model lead to a macroscopic degeneracy of the low-temperature phase and prevent the definition of a standard magnetic order parameter. Consideration of the strongly anisotropic limit of the model suggests that a layered, “fuki-nuke” order still exists and we confirm this with multi-canonical simulations. The macroscopic degeneracy of the low-temperature phase also changes the finite-size scaling corrections at the first-order transition in the model and we see this must be taken into account when analyzing our measurements.

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Low-temperature electrical resistivity of as-cast glassy, relaxed, and crystallized Pd40Cu30Ni10P20alloys

2003 ◽  
Vol 15 (50) ◽  
pp. 8713-8718 ◽  
Author(s):  
J Z Jiang ◽  
W Roseker ◽  
C S Jacobsen ◽  
G F Goya
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature

The effect of cold work on the low-temperature electrical resistivity of silver

1981 ◽  
Vol 44 (6) ◽  
pp. 711-729 ◽  
Author(s):  
B. R. Barnard ◽  
A. D. Caplin ◽  
M. N. B. Dalimin
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Cold Work
Sign in / Sign up

Export Citation Format

Share Document