THE EFFECT OF THE ELECTRON CORRELATION ON THE ELECTRICAL RESISTIVITY OF LIQUID METALS

1963 ◽  
Vol 41 (9) ◽  
pp. 1397-1404
Author(s):  
Hirohisa Endo ◽  
Shota Suekane
Keyword(s):  
Electrical Resistivity ◽  
Liquid Metals ◽  
Elementary Theory ◽  
Mean Free Path ◽  
Liquid Sodium ◽  
Electron Model ◽  
Plasma Oscillations ◽  
Effective Electron ◽  
Conduction Electrons ◽  
Ion Interactions

An elementary theory of the electrical resistivity of monovalent liquid metals is given. On using the theory of the plasma oscillations of conduction electrons, the electron–ion interactions are separated into two parts: one gives the effective electron–ion interactions which are screened as the result of the effects of the plasma oscillations of the conduction electrons and contributes directly to the electrical resistivity; the other describes the interactions between the ions and the plasma oscillations. The screened electron–ion interaction is defined as the pseudo-potential of the ion.The theory constructed on the basis of the free-electron model is applied in the first instance to estimate the electrical resistivity of liquid sodium near the melting point. Callaway's potential and the correlation function of ions determined from neutron diffraction experiments are used and the mean free path of a conduction electron is calculated numerically. Therefore, in our theory, the "plasma term" and the "structure term" of Ziman's theory are not treated separately.

The Study of Liquid-Liquid Structural Transition of PbSnBi Ternary Alloy

2010 ◽  
Vol 152-153 ◽  
pp. 242-247
Author(s):  
Jin Yu ◽  
Hui Zhen Yang ◽  
Fang Qiu Zu ◽  
Wei Xu
Keyword(s):  
Electrical Resistivity ◽  
Structural Transition ◽  
Turning Point ◽  
Mean Free Path ◽  
Anomalous Behavior ◽  
Conduction Electrons ◽  
Present Letter ◽  
Electron Transport Properties ◽  
The Mean ◽  
Increasing Temperature

The electrical resistivity of liquid PbSnBi alloy has been precisely measured by the Direct Current (DC) four-probe technique in our experiment. It was found that the electrical resistivity-temperature (ρ-T) curves changed discontinuously at several-hundred degrees above liquidus. However, the ρ-T curves was linear before this turning point with increasing temperature. Moreover, the ρ-T curve of the different composition alloys showed different turning points. The anomalous behavior of electrical resitivity indicates the alteration of the electron transport properties and the mean free path LZ of conduction electrons, since resistivity as one of the physical properties sensitive to the structure and this discontinuous alteration induced by temperature suggests the liquid-liquid structural transition taking place in PbSnBi melts. This present Letter makes a beneficial attempt at studying electrical resistivity to investigate liquid-liquid structural transition.

Sputtering pressure dependence of hydrogen-sensing effect of palladium films

2009 ◽  
Vol 24 (6) ◽  
pp. 1919-1927 ◽  
Author(s):  
Chung Wo Ong ◽  
Yu Ming Tang
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Mean Free Path ◽  
Induced Response ◽  
Resistivity Ratio ◽  
Hydrogen Sensing ◽  
The Mean ◽  
Sputtering Pressure ◽  
Specific Volumes ◽  
Hydride Phases

The electrical resistivity ρ of palladium (Pd) films prepared by using magnetron sputtering at different pressures φ ranging from 2 to 15 mTorr showed very different hydrogen (H)-induced response. This reaction is because the mean free path of the particles in vacuum changes substantially with φ, such that the structure of the deposits is altered accordingly. A film prepared at a moderate φ value of 6 mTorr has a moderate strength. After a few hydrogenation-dehydrogenation cycles, some cracks are generated because of the great difference in the specific volumes of the metal and hydride phases. Breathing of the cracks in subsequent switching cycles occurred, which led to the response gain of ρ, defined as the resistivity ratio of the dehydrogenated-to-hydrogenated states during a cycle, to increase to 17. This result demonstrates the attractiveness of using the Pd films in H2 detection application. The H-induced resistive response of the films prepared at other φ values was found to be much smaller.

The electrical resistivity of lithium-6

1961 ◽  
Vol 263 (1314) ◽  
pp. 407-419 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Isotopic Composition ◽  
Specific Heat ◽  
Room Temperature ◽  
Natural Isotopic Composition ◽  
Square Roots ◽  
Conduction Electrons ◽  
Ionic Mass ◽  
Theoretical Predictions ◽  
Electrical Resistivities

The electrical resistivities of lithium -6 and lithium of natural isotopic composition have been studied between 4°K and room temperature. In addition, their absolute resistivities have been carefully compared at room temperature. These measurements show that the effect of ionic mass on electrical resistivity agrees with simple theoretical predictions, namely, that the properties of the conduction electrons in lithium do not depend on the mass of the ions, and that the characteristic lattice frequencies for the two pure isotopes are in the inverse ratio of the square roots of their ionic masses. A comparison with the specific heat results of Martin (1959, 1960), where the simple theory is found not to hold, indicates the possibility that anharmonic effects are present which affect the specific heat but not the electrical resistivity.

scholarly journals A Comprehensive Study on Gamma Rays and Fast Neutron Sensing Properties of GAGOC and CMO Scintillators for Shielding Radiation Applications

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Shams A. M. Issa ◽  
M. I. Sayyed ◽  
M. H. M. Zaid ◽  
K. A. Matori
Keyword(s):  
Energy Range ◽  
Fast Neutron ◽  
Gamma Ray ◽  
Mean Free Path ◽  
Nuclear Radiation ◽  
Space Technology ◽  
Effective Electron ◽  
Geometrical Progression ◽  
Broad Energy Range ◽  
Removal Cross Section

The WinXCom program has been used to calculate the mass attenuation coefficients (μm), effective atomic numbers (Zeff), effective electron densities (Nel), half-value layer (HVL), and mean free path (MFP) in the energy range 1 keV–100 GeV for Gd3Al2Ga3O12Ce (GAGOC) and CaMoO4 (CMO) scintillator materials. The geometrical progression (G-P) method has been used to compute the exposure buildup factors (EBF) and gamma ray energy absorption (EABF) in the photon energy range 0.015–15 MeV and up to a 40 penetration depth (mfp). In addition, the values of the removal cross section for a fast neutron ∑R have been calculated. The computed data observes that GAGOC showed excellent γ-rays and neutrons sensing a response in the broad energy range. This work could be useful for nuclear radiation sensors, detectors, nuclear medicine applications (medical imaging and mammography), nuclear engineering, and space technology.

scholarly journals On some electron properties of tellurium and Wilson's mechanism of semi-conductivity

1935 ◽  
Vol 148 (865) ◽  
pp. 648-664 ◽  
Keyword(s):  
Electrical Conductivity ◽  
Free Electron ◽  
Previous Investigation ◽  
Room Temperature ◽  
Specific Resistance ◽  
Mean Free Path ◽  
Free Electrons ◽  
Conduction Electrons ◽  
Classical Statistics ◽  
Limiting Case

In a previous investigation it was found that the unusually high value for the Wiedemann-Franz ratio of tellurium could be explained as being only a formal anomally. The amount of heat transferred by the bound atoms is the same in tellurium as in conducting metals; but, in tellurium, in contrast to good conductors, it is responsible for almost the entire heat conductivity because the heat transferred by the free electrons is especially small. This indicates that tellurium differs from true metals in that the density of free electrons is very small. Classical statistics is therefore applicable and the electrical conductivity is given by x = 4/3 e 2 ln (2 πmk T) -5/9 , (1) where n is the density of free (conduction) electrons and l is their mean free path. Taking the specific resistance of tellurium at room temperature as 0.3 ohm-cm and l as 5.2 X 10 -6 cm (Sommerfeld's value for silver, found by applying Fermi-Dirac statistics), n is 2.9 X 10 16 , or about one free electron per million tellurium atoms in contrast to good conductors in which there is approximately one free electron per atom. Even in the limiting case with l = 3.2 X 10 -3 cm (the distance between the tellurium atoms), n is 4.7 X 10 18 which is about one free electron for every 6000 tellurium atoms.

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