THE THERMOELECTRIC POWER OF ANNEALED AND COLD-WORKED SILVER AND GOLD AT LOW TEMPERATURES

1960 ◽  
Vol 38 (8) ◽  
pp. 1048-1058 ◽  
Author(s):  
W. B. Pearson

Most of the low-temperature thermoelectric behavior of annealed and cold-worked silver and gold samples can be accounted for satisfactorily by using Kohler's equation, S = ΣWiSi/ΣWi, to calculate as a function of temperature the diffusion thermoelectricity under the influence of various competing scattering mechanisms in the metals, and by taking account of the phonon-drag contribution to the thermoelectricity. New data are presented and interpreted.

1978 ◽  
Vol 56 (5) ◽  
pp. 497-500
Author(s):  
A. Cafaro ◽  
F. T. Hedgcock ◽  
W. B. Muir

The thermoelectric power of pure GeTe and GeMnTe containing 1 and 5at.% Mn has been measured between 25 and 2.5 K. The manganese doped Ge–Te alloys ferromagnetically order at low temperatures and theoretical estimates of the magnon drag contribution to the thermopower in these degenerate semiconductors is 60 μV/K. When appropriate allowance is made for the effects of impurity scattering on the phonon drag thermopower there appears to be no experimental evidence for a magnon drag contribution to the thermopower of this magnitude. An upper limit for the magnon drag contribution to the thermopower estimated from the experimental results for these materials is 0.5 μV/K.


2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.


Nature ◽  
1954 ◽  
Vol 173 (4404) ◽  
pp. 591-591 ◽  
Author(s):  
M. J. DRUYVESTEYN ◽  
K. J. BLOK VAN LAER

1972 ◽  
Vol 50 (20) ◽  
pp. 2444-2450 ◽  
Author(s):  
J. P. Jay-Gerin

The low-temperature thermoelectric power (TEP) and the Nernst–Ettingshausen (NE) coefficient of graphite due to phonon drag are studied in the presence of a magnetic field H directed along the c axis and small enough for the quantum-mechanical character of the motion of the carriers to be negligible. Expressions for the TEP and the NE coefficient are obtained on the basis of the theory of Jay-Gerin and Maynard, in which the phonon-drag TEP of graphite in the absence of a magnetic field is linked with the Kohn screening anomaly. The results suggest a method by which information might be obtained about the strength of the electron– and hole–phonon coupling directly from experiment. A satisfactory agreement is found with the measurements of Takezawa, Tsuzuku, Ono, and Hishiyama and of Tamarin, Shalyt, and Volga.


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