ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORS

1956 ◽  
Vol 34 (12A) ◽  
pp. 1356-1368 ◽  
Author(s):  
N. F. Mott

A discussion is given of the conductivity to be expected from a crystalline array of atoms when the interatomic distance a is varied. It is shown that both for monovalent atoms and divalent atoms the conductivity is zero at T = 0 when a is large, the wave function of the system being real so that no current is possible. In both types of atom a discontinuous transition to a state showing metallic conductivity is predicted at a definite value of a. For divalent atoms calculations using Bloch orbitals and localized Wannier functions give essentially the same result; for monovalent metals they do not, and correspond to physically different states of the system. Applications are made to impurity-band conduction in semiconductors, the impurity centers being treated by the usual model as expanded atoms in a uniform dielectric. It is shown that the concentrations at which "metallic" conductivity sets in are not unexpected, but that it is difficult to understand impurity band conduction at lower concentrations unless the semiconductors are "compensated", either chemically or through the presence of dislocations.

1982 ◽  
Vol 60 (1) ◽  
pp. 102-108
Author(s):  
B. A. Lombos ◽  
M. Averous ◽  
C. Fau ◽  
J. Calas ◽  
S. Charar

Transport property measurements on p-type germanium, doped to be in the intermediate concentration region (1016 < NA < 1018 cm−3), were performed in the temperature range of 1.6–77 K under static (up to 337 MPa) and modulated (2.4 on 180 MPa) uniaxial compression. To elucidate the conduction mechanisms in this region the position of the Fermi level is calculated as a function of temperature and uniaxial stress and correlated to the variation of the measured transport properties. The analyses indicate an Anderson type metallic conduction, characteristic of random, amorphous systems, while the Fermi level is in the impurity band. Mott type metallic conduction, characteristic to periodic systems, determines the transport properties as the Fermi level moves out of the impurity band.


1976 ◽  
Vol 37 (C4) ◽  
pp. C4-333-C4-336
Author(s):  
M. AVEROUS ◽  
J. CALAS ◽  
C. FAU

2021 ◽  
Vol 118 (7) ◽  
pp. 072105
Author(s):  
Anil Kumar Rajapitamahuni ◽  
Laxman Raju Thoutam ◽  
Praneeth Ranga ◽  
Sriram Krishnamoorthy ◽  
Bharat Jalan

1967 ◽  
Vol 45 (1) ◽  
pp. 119-126 ◽  
Author(s):  
J. Basinski ◽  
R. Olivier

Hall effect and resistivity measurements have been made in the temperature range 4.2–360 °K on several samples of n-type GaAs grown under oxygen atmosphere and without any other intentional dopings. The principal shallow donor in this material is considered to be Si. All samples exhibited impurity-band conduction at low temperature. Electron concentrations in the conduction band were calculated, using a two-band model, and then fitted to the usual equation expressing charge neutrality. A value of 2.3 × 10−3 eV was obtained for the ionization energy of the donors, for donor concentration ranging from 5 × 1015 cm−3 to 2 × 1016 cm−3. The conduction in the impurity band was of the hopping type for these concentrations. A value of 3.5 × 1016 cm−3 was obtained for the critical transition concentration of the impurity-band conduction to the metallic type.


2001 ◽  
Vol 90 (8) ◽  
pp. 3993-3997 ◽  
Author(s):  
L. Essaleh ◽  
S. M. Wasim ◽  
J. Galibert

1966 ◽  
Vol 36 (4) ◽  
pp. 695-711 ◽  
Author(s):  
Takeo Matsubara ◽  
Takahito Kaneyoshi

Sign in / Sign up

Export Citation Format

Share Document