Effects of pressure, temperature, and grain size on the kinetics of the calcite → aragonite transformation

1979 ◽  
Vol 16 (7) ◽  
pp. 1402-1418 ◽  
Author(s):  
N. S. Brar ◽  
H. H. Schloessin

Single crystals and polycrystalline samples of transparent calcite (Iceland spar) were used to investigate the effects of pressure (p), temperature (T), pressure beyond an accepted equilibrium value (Δp), and grain size (D) on the kinetics of the calcite–aragonite transformation. Transformed mass fractions x(t), produced after different times of exposure to constant pressure ranging from 14 to 25 kbar (1.4 to 2.5 GPa) and constant temperature from 300 to 600 °C, were determined from integrated X-ray peak intensities of the (012), (021), and (111) reflections of aragonite. Values for the rale constant K and the exponent n characterizing the transformation were computed from the x(t) data using Cahn's nucleation and growth model for solid–solid transformations. At 17 kbar(1.7 GPa), K(s−1) increases from 2.00 × 10−5 at 300 °C to 1.39 × 10−3 at 600 °C. The exponent n, of the order of 1, mostly <1, indicates that the nucleation stage is terminated rapidly by site saturation and that most of the transformation takes place thereafter by growth as expected from theory. For single crystals the relationship between x(t) and Δp, for a period of 1 hour is almost linear. At 600 °C the relative increase of x(t) amounts to 0.1 kbar−1 (1 × 107 Pa−1). For a given time, x increases nearly exponentially with T. The apparent activation energy for the transformation, at 17 kbar (1.7 GPa), is 16 kcal mol−1. For polycrystals x(t) decreases as [Formula: see text]. This somewhat surprising result may be related to deviatoric stresses and stress concentration by the already transformed volume fractions, which act as misfitting, ellipsoidal, inclusions.

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.


2012 ◽  
Vol 717-720 ◽  
pp. 493-496
Author(s):  
Deborah Dompoint ◽  
Irina G. Galben-Sandulache ◽  
Alexandre Boulle ◽  
Didier Chaussende ◽  
Dominique Eyidi ◽  
...  

The 3C-6H polytypic transition in 3C-SiC single crystals is studied by means of diffuse X-ray scattering (DXS) coupled with transmission electron microscopy (TEM). TEM reveals that the partially transformed SiC crystals contain regions of significantly transformed SiC (characterized by a high density of stacking faults) co-existing with regions of pure 3C-SiC. The simulation of the diffuse intensity allows to determine both the volume fraction of transformed material and the transformation level within these regions. It is further shown that the evolution with time and temperature of the transition implies the multiplication and glide of partial dislocations, the kinetics of which are quantified by means of DXS.


1993 ◽  
Vol 297 ◽  
Author(s):  
R.I. Johnson ◽  
G.B. Anderson ◽  
J.B. Boyce ◽  
D.K. Fork ◽  
P. Mei ◽  
...  

This paper describes new results on the relationship between the grain size, mobility, and Si (111) x-ray peak intensity of laser crystallized amorphous silicon as a function of the laser fluence, shot density, substrate temperature, and film thickness. These observations include an unexpected narrow peak found in the silicon (111) x- ray peak intensity, which occurs at a specific laser fluence for a given film thickness and substrate temperature. Amorphous silicon materials processed at laser energy densities defined by this peak exhibit exceptionally large grain sizes and electron mobilities that cannot be obtained at any other energy and shot density combination above or below the energy at which the Si (111) x-ray peak intensity maximum occurs.


2011 ◽  
Vol 110 (5) ◽  
pp. 053508 ◽  
Author(s):  
D. Dompoint ◽  
A. Boulle ◽  
I. Galben-Sandulache ◽  
D. Chaussende ◽  
L. T. M. Hoa ◽  
...  

2006 ◽  
Vol 519-521 ◽  
pp. 1569-1578
Author(s):  
Dorte Juul Jensen

By 3 dimensional X-ray diffraction (3DXRD) using high energy X-rays from synchrotron sources it is possible to study in-situ the nucleation and growth during recrystallization. In this paper it is described and discussed how 3DXRD can supplement EBSP measurements of nucleation and growth. Three types of studies are considered: i) orientation relationships between nuclei and parent deformed matrix, ii) recrystallization kinetics of individual bulk grains and iii) filming of growing grains in deformed single crystals.


1981 ◽  
Vol 36 (7) ◽  
pp. 727-734 ◽  
Author(s):  
J. Liditscheidl ◽  
K. J. Hartig ◽  
N. Getoff ◽  
Ch. Tauschnitz ◽  
G. Nauer

Abstract The relationship between the surface structure, film thickness and the photoelectrochemical behaviour (photocurrent, corrosion and stability) of n-Ti02-films produced by controlled thermal oxidation of titanium foils is carefully investigated. X-ray surveys, optical and scanning electron microscopical observations were performed to elucidate the surface structure. It is established that a special etching procedure of Ti-metal foils, followed by controlled oxidation at 600 to 700 °C for 10 to 30 min in the presence of sufficient oxygen results in n-Ti02 layers with a defined surface structure and high photoactivity. As charge transfer through the Schottky barrier is decisive for the photoefficiency, the formation kinetics of the oxide layer is the most influencing factor.


1992 ◽  
Vol 275 ◽  
Author(s):  
Wai Lo ◽  
B. A. Glowacki

ABSTRACTOur study concentrated on the relationship between the proportions of the phases in the precursors used to synthesise the Bi-2223 phase and the ultimate microstructures of the 2223 phase materials, although the overall cation stoichiometry fixed. It was found that the final 2223 phase grains were larger, although the bulk density tended to be lower with the grains loosely packed together, when the major phase in the precursor was 2212 phase. This was proved to be partly caused by the fast growth rate of the 2212 phase grains which were eventually converted into the 2223 phase. When 2223 phase was present in the precursor, the bulk density became higher and 2223 phase grains became closely packed together, although the average grain size became smaller. This was explained by the existence of a liquid phase at higher temperatures during the formation of the 2223 phase and the sintering of the 2223 phase grains.


1993 ◽  
Vol 307 ◽  
Author(s):  
Jun Wu ◽  
M. Dudley

ABSTRACTSynchrotron white beam x-ray topography has been used to study dislocation configurations induced in InSb single crystals by three point bending at temperatures above the brittle to ductile transition point. Semi-hexagonal dislocation loops with one long screw segment and two outcropping 60° segments, single 60° B(g) dislocation kinks on screw dislocations, and screw dislocation dipoles were observed. The relationship between these observed defect structures and the mobilities of A(g), B(g), and screw dislocations in InSb, which appear to control the plastic behavior of crystals with the sphalerite structure, is discussed. Dislocation interactions and their role in the plastic deformation process are also addressed.


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