EXPERIMENTAL INVESTIGATION OF CHALCOCITE: ANNEALING AND PLASTIC DEFORMATION AT ELEVATED TEMPERATURES

1965 ◽  
Vol 2 (2) ◽  
pp. 98-117
Author(s):  
Raymond Davies

The recrystallization behavior and deformation of synthetic chalcocite (Cu2S) in the temperature range 400–725 °C was studied microscopically after the compound was annealed in evacuated silica glass capsules and heated under differential pressures in sealed gold capsules. The temperature of recrystallization and grain growth ascribed to the hexagonal cubic inversion, at sulfur vapor pressures much less than 1 atmosphere, was determined at 465 ± 5 °C, with annealing time of [Formula: see text].Experiments involving differential pressures of 8 000 p.s.i. show that chalcocite in the solid state becomes considerably more mobile above 563 ± 10 °C and can readily be injected as a plastic mass to form veins without preservation of deformational textures.Natural bornite and natural galena may also be injected under differential pressure at 640 °C, but some unhealed fractures remain. Flow structure is well-preserved in galena and, under certain conditions, in bornite.Mixtures of bornite and pyrite flowed and recrystallized to chalcopyrite and bornite with exsolved chalcopyrite. No evidence of flowage remained.Chalcopyrite and pyrrhotite are resistant to injection under similar differential pressures and temperatures.

2010 ◽  
Vol 163 ◽  
pp. 114-117 ◽  
Author(s):  
Kinga Rodak ◽  
Krzysztof Radwański

The annealing behaviour of monocrystaline Cu processed by Cyclic Extrusion Compression (CEC) was investigated. The effect of the CEC strain on the annealing behaviour of submicrometer grained structure was studied by examination of the microstructural changes of the samples processed by two different CEC strains, 4.8 and 13.9 during annealing at 300oC for the time in the range from 1sec to 120 min. The results show that microstructure is stable up to an annealing time of 15 min. At a higher time of annealing (above 15 min), a gradual grain growth occurs.


1971 ◽  
Vol 20 (212) ◽  
pp. 606-609 ◽  
Author(s):  
Kiyohisa IMADA ◽  
Tuneo YAMAMOTO ◽  
Kenji KANEKIYO ◽  
Motowo TAKAYANAGI

1997 ◽  
Vol 481 ◽  
Author(s):  
Matthew T. Johnson ◽  
Shelley R. Gilliss ◽  
C. Barry Carter

ABSTRACTThin films of In2O3 and Fe2O3 have been deposited on (001) MgO using pulsed-laser deposition (PLD). These thin-film diffusion couples were then reacted in an applied electric field at elevated temperatures. In this type of solid-state reaction, both the reaction rate and the interfacial stability are affected by the transport properties of the reacting ions. The electric field provides a very large external driving force that influences the diffusion of the cations in the constitutive layers. This induced ionic current causes changes in the reaction rates, interfacial stability and distribution of the phases. Through the use of electron microscopy techniques the reaction kinetics and interface morphology have been investigated in these spinel-forming systems, to gain a better understanding of the influence of an electric field on solid-state reactions.


2013 ◽  
Vol 6 (2) ◽  
pp. 93-97 ◽  
Author(s):  
B. J. Tkalcec ◽  
G. J. Golabek ◽  
F. E. Brenker

2001 ◽  
Vol 27 (1) ◽  
pp. 63-71 ◽  
Author(s):  
S Sivakumar ◽  
Manjunath Subbanna ◽  
Satyam S Sahay ◽  
Vijay Ramakrishnan ◽  
P.C Kapur ◽  
...  

1988 ◽  
Vol 135 ◽  
Author(s):  
Werner Weppner

Solid State ion conductors are sucessfully employed in chemical sensors for gases such as oxygen for process control and environmental protection. The application requires elevated temperatures for sufficiently high ionic conductivity and is restricted to a few gases for which suitable solid electrolytes are available.


Solar Energy ◽  
2022 ◽  
Vol 231 ◽  
pp. 484-495
Author(s):  
Neha Kumari ◽  
Jitendra Kumar ◽  
Sarang Ingole
Keyword(s):  

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