FURTHER STUDIES ON CANADIAN LARD: PHOSPHORUS CONTENT, COLOR, AND STABILITY

1950 ◽  
Vol 28f (2) ◽  
pp. 21-30 ◽  
Author(s):  
H. J. Lips
Keyword(s):  
Volatile Fatty Acids ◽  
Phosphorus Content ◽  
Lovibond Color ◽  
Stability Test ◽  
Processing Conditions ◽  
Keeping Quality ◽  
Photoelectric Colorimeter ◽  
Yellow Region ◽  
Colorimetric Procedure ◽  
Swift Stability

A modified colorimetric procedure showed that phosphorus content of Canadian lard (12 dry rendered samples and 21 wet rendered samples) was generally less than 0.001%, and did not appear to be definitely related to method of rendering or to keeping quality. Color of lard was conveniently measured with the Evelyn photoelectric colorimeter; photoelectric transmission values were most closely related to Lovibond color values in the yellow region. Lovibond color could be predicted only approximately from transmission. No association of color with processing conditions or with keeping quality was found. The criterion of an indicator change by volatile fatty acids in the Swift stability test rather than the attainment of an arbitrary peroxide value by the fat gave a closer association of Swift stability test values with organoleptic storage life of lard.

The Precision of the Swift Stability Test

1981 ◽  
Vol 83 (4) ◽  
pp. 133-135 ◽  
Author(s):  
C. W. van Oosten ◽  
C. Poot ◽  
A. C. Hensen
Keyword(s):  
Stability Test ◽  
Swift Stability

Modifications of the swift stability test

1943 ◽  
Vol 20 (9) ◽  
pp. 169-171 ◽  
Author(s):  
R. W. Riemenschneider ◽  
J. Turer ◽  
R. M. Speck
Keyword(s):  
Stability Test ◽  
Swift Stability

Transcription factor/DNA interactions visualized by electron spectroscopic imaging

1992 ◽  
Vol 50 (1) ◽  
pp. 450-451
Author(s):  
David P. Bazett-Jones ◽  
Mark L. Brown
Keyword(s):  
Transcription Factor ◽  
Dna Sequences ◽  
Transcription Initiation ◽  
Molecular Mechanisms ◽  
Phosphorus Content ◽  
Spectroscopic Imaging ◽  
Electron Spectroscopic Imaging ◽  
Dna Backbone ◽  
Two Parameters ◽  
High Level

A multisubunit RNA polymerase enzyme is ultimately responsible for transcription initiation and elongation of RNA, but recognition of the proper start site by the enzyme is regulated by general, temporal and gene-specific trans-factors interacting at promoter and enhancer DNA sequences. To understand the molecular mechanisms which precisely regulate the transcription initiation event, it is crucial to elucidate the structure of the transcription factor/DNA complexes involved. Electron spectroscopic imaging (ESI) provides the opportunity to visualize individual DNA molecules. Enhancement of DNA contrast with ESI is accomplished by imaging with electrons that have interacted with inner shell electrons of phosphorus in the DNA backbone. Phosphorus detection at this intermediately high level of resolution (≈lnm) permits selective imaging of the DNA, to determine whether the protein factors compact, bend or wrap the DNA. Simultaneously, mass analysis and phosphorus content can be measured quantitatively, using adjacent DNA or tobacco mosaic virus (TMV) as mass and phosphorus standards. These two parameters provide stoichiometric information relating the ratios of protein:DNA content.

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

STABILITY TEST RESULT OF THE JAPANESE TEST COIL FOR THE LARGE COIL TASK AT THE DOMESTIC TEST

1984 ◽  
Vol 45 (C1) ◽  
pp. C1-131-C1-134 ◽  
Author(s):  
M. Nishi ◽  
T. Ando ◽  
T. Hiyama ◽  
H. Tsuji ◽  
Y. Takahashi ◽  
...  
Keyword(s):  
Stability Test ◽  
Test Result
Sign in / Sign up

Export Citation Format

Share Document