Probing periodic oscillations in a silane dusty plasma in a very high-frequency plasma enhanced chemical vapor deposition process

2014 ◽  
Vol 92 (7/8) ◽  
pp. 744-748 ◽  
Author(s):  
A. Mohan ◽  
C.M. van der Wel ◽  
R.E.I. Schropp ◽  
J.K. Rath
Keyword(s):  
Dusty Plasma ◽  
Hydrogen Plasma ◽  
Dust Cloud ◽  
Void Formation ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Gas Flows ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma

To estimate the dust formation time scale in a silane–hydrogen plasma, optical and electrical plasma diagnostics are performed. We report a periodic fluctuation in emission intensity and electric current in a dusty plasma. The trends of the frequency of fluctuations with varying substrate temperatures and gas flows are studied. However, no such fluctuation is observed in the nondusty plasma. It is hypothesized that this fluctuation arises from the periodic formation and ejection of a dust cloud via the void formation when a critical dust size is reached.

scholarly journals The Effect of Nitrogen Incorporation on the Optical Properties of Si-Rich a-SiCx Films Deposited by VHF PECVD

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 637
Author(s):  
Hongliang Li ◽  
Zewen Lin ◽  
Yanqing Guo ◽  
Jie Song ◽  
Rui Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Near Infrared ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Nonradiative Recombination ◽  
Very High Frequency ◽  
N Content ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
N Incorporation

The influence of N incorporation on the optical properties of Si-rich a-SiCx films deposited by very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD) was investigated. The increase in N content in the films was found to cause a remarkable enhancement in photoluminescence (PL). Relative to the sample without N incorporation, the sample incorporated with 33% N showed a 22-fold improvement in PL. As the N content increased, the PL band gradually blueshifted from the near-infrared to the blue region, and the optical bandgap increased from 2.3 eV to 5.0 eV. The enhancement of PL was suggested mainly from the effective passivation of N to the nonradiative recombination centers in the samples. Given the strong PL and wide bandgap of the N incorporated samples, they were used to further design an anti-counterfeiting label.

Microstructure and Electric Transport Characteristic of Microcrystalline Silicon Films Fabricated by Very High Frequency Plasma Enhanced Chemical Vapor Deposition

2010 ◽  
Vol 663-665 ◽  
pp. 600-603
Author(s):  
Xiang Wang ◽  
Rui Huang ◽  
Jie Song ◽  
Yan Qing Guo ◽  
Chao Song ◽  
...  
Keyword(s):  
High Frequency ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Hydrogen Flow ◽  
Transmission Electron ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

Microcrystalline silicon (μc-Si:H) film deposited on silicon oxide in a very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4 has been investigated by Raman spectroscopy and high resolution transmission electron microscopy. Raman spectroscopy results show that the crystalline volume fraction increases with increasing the hydrogen flow rate and for the hydrogen flow rate of 160 sccm, the crystalline volume fraction reaches to 67.5%. Nearly parallel columnar structures with complex microstructure are found from cross-sectional transmission electron microscopy images of the film. The temperature depend dark conductivity and activation energy are studied in order to investigate the electronic transport processes in the nc-Si films.

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