Local Growth of Random Fields with Independent Increments

1979 ◽  
Vol 24 (1) ◽  
pp. 184-191
Author(s):  
N. M. Zinchenko
Keyword(s):  
Random Fields ◽  
Local Growth ◽  
Independent Increments

scholarly journals Random fields with independent increments

1972 ◽  
Vol 12 (4) ◽  
pp. 75-85
Author(s):  
A. Katkauskaitė
Keyword(s):  
Random Fields ◽  
Independent Increments

The abstracts (in two languages) can be found in the pdf file of the article. Original author name(s) and title in Russian and Lithuanian: А. Каткаускайте. Случайные поля с независимыми приращениями A. Katkauskaitė. Atsitiktiniai laukai su nepriklausomaisiais pokyčiais

Diffraction from arrays of antiphase boundaries in ordered III-V alloys

1987 ◽  
Vol 45 ◽  
pp. 312-313
Author(s):  
T. S. Kuan
Keyword(s):  
High Surface ◽  
Growth Conditions ◽  
Ternary Alloys ◽  
Local Growth ◽  
Antiphase Boundaries ◽  
Surface Mobility ◽  
Ordered Phases ◽  
Diffraction Patterns ◽  
Atomically Flat ◽  
Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

Sign in / Sign up

Export Citation Format

Share Document