A quantitative model of epitaxial layers growth from the gas phase with a simultaneous participation of diffusion, adsorption, and chemical reaction

1986 ◽  
Vol 51 (1) ◽  
pp. 1-16 ◽  
Author(s):  
Emerich Erdös ◽  
Jiří Laitner ◽  
Josef Stejskal ◽  
Přemysl Klíma

For a quantitative description of the epitaxial growth rate of gallium arsenide, a model has been proposed including two rate controlling steps, namely one step of physical nature and the other one of chemical nature. As the step of physical nature, the diffusion of gaseous components between the gas phase and the epitaxial layer surface has been considered, and from the steps of chemical nature the adsorption of gaseous components on the epitaxial layer surface and a heterogenous surface reaction have been taken into account. According to the kind of the chemical rate controlling step, five mechanisms have been proposed, where a one - centre model was used in all cases, i.e. the idea that the rate controlling step takes place under participation of one active centre. For all the mechanisms considered, the pertaining rate equations have been derived, which were confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed both from the view point of plausibility of individual mechanisms and from the point of view of their applicability and of the next research direction.

1987 ◽  
Vol 52 (5) ◽  
pp. 1131-1159
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma

For a quantitative description of the epitaxial growth rate of gallium arsenide, a model is proposed including two rate controlling steps. One of these steps is the diffusion of gaseous components between the gas phase and the epitaxial layer surface, and the other step is of chemical nature, i.e. either the surface reaction or adsorption or desorption of one of the gaseous components. In the model considered, an active dual site is involved in the second rate controlling step, and twelve mechanisms are proposed for which the pertinent rate equations are derived. The individual mechanisms differ one from the other not only by the kind of the rate controlling step but also by the occupation of the dual site, viz. in the both direct and reversed direction. The proposed model is confronted with the dependences of the growth rate on partial pressures of components in the feed found by experiment. The results are discussed with regard to the possibility of individual mechanisms and of the model as a whole, and also with respect to their applicability and to the direction of further investigations.


1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.


2007 ◽  
Vol 7 (23) ◽  
pp. 5989-6023 ◽  
Author(s):  
U. Pöschl ◽  
Y. Rudich ◽  
M. Ammann

Abstract. Aerosols and clouds play central roles in atmospheric chemistry and physics, climate, air pollution, and public health. The mechanistic understanding and predictability of aerosol and cloud properties, interactions, transformations, and effects are, however, still very limited. This is due not only to the limited availability of measurement data, but also to the limited applicability and compatibility of model formalisms used for the analysis, interpretation, and description of heterogeneous and multiphase processes. To support the investigation and elucidation of atmospheric aerosol and cloud surface chemistry and gas-particle interactions, we present a comprehensive kinetic model framework with consistent and unambiguous terminology and universally applicable rate equations and parameters. It enables a detailed description of mass transport and chemical reactions at the gas-particle interface, and it allows linking aerosol and cloud surface processes with gas phase and particle bulk processes in systems with multiple chemical components and competing physicochemical processes. The key elements and essential aspects of the presented framework are: a simple and descriptive double-layer surface model (sorption layer and quasi-static layer); straightforward flux-based mass balance and rate equations; clear separation of mass transport and chemical reactions; well-defined and consistent rate parameters (uptake and accommodation coefficients, reaction and transport rate coefficients); clear distinction between gas phase, gas-surface, and surface-bulk transport (gas phase diffusion, surface and bulk accommodation); clear distinction between gas-surface, surface layer, and surface-bulk reactions (Langmuir-Hinshelwood and Eley-Rideal mechanisms); mechanistic description of concentration and time dependences (transient and steady-state conditions); flexible addition of unlimited numbers of chemical species and physicochemical processes; optional aggregation or resolution of intermediate species, sequential processes, and surface layers; and full compatibility with traditional resistor model formulations. The outlined double-layer surface concept and formalisms represent a minimum of model complexity required for a consistent description of the non-linear concentration and time dependences observed in experimental studies of atmospheric multiphase processes (competitive co-adsorption and surface saturation effects, etc.). Exemplary practical applications and model calculations illustrating the relevance of the above aspects are presented in a companion paper (Ammann and Pöschl, 2007). We expect that the presented model framework will serve as a useful tool and basis for experimental and theoretical studies investigating and describing atmospheric aerosol and cloud surface chemistry and gas-particle interactions. It shall help to end the "Babylonian confusion" that seems to inhibit scientific progress in the understanding of heterogeneous chemical reactions and other multiphase processes in aerosols and clouds. In particular, it shall support the planning and design of laboratory experiments for the elucidation and determination of fundamental kinetic parameters; the establishment, evaluation, and quality assurance of comprehensive and self-consistent collections of rate parameters; and the development of detailed master mechanisms for process models and derivation of simplified but yet realistic parameterizations for atmospheric and climate models.


1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.


1997 ◽  
Vol 467 ◽  
Author(s):  
Fumio Yoshizawa ◽  
Kunihiro Shiota ◽  
Daisuke Inoue ◽  
Jun-ichi Hanna

ABSTRACTPolycrystalline SiGe (poly-SiGe) film growth by reactive thermal CVD with a gaseous mixture of Si2H6 and GeF4 was investigated on various substrates such as Al,Cr, Pt, Si, ITO, ZnO and thermally grown SiO2.In Ge-rich film growth, SEM observation in the early stage of the film growth revealed that direct nucleation of crystallites took place on the substrates. The nucleation was governed by two different mechanisms: one was a heterogeneous nucleation on the surface and the other was a homogeneous nucleation in the gas phase. In the former case, the selective nucleation was observed at temperatures lower than 400°C on metal substrates and Si, where the activation of adsorbed GeF4 on the surface played a major role for the nuclei formation, leading to the selective film growth.On the other hand, the direct nucleation did not always take place in Si-rich film growth irrespective of the substrates and depended on the growth rate. In a growth rate of 3.6nm/min, the high crystallinity of poly-Si0.95Ge0.05in a 220nm-thick film was achieved at 450°C due to the no initial deposition of amorphous tissue on SiO2 substrates.


2017 ◽  
Vol 122 (7) ◽  
pp. 075702 ◽  
Author(s):  
Yuki Tabuchi ◽  
Koji Ashida ◽  
Masashi Sonoda ◽  
Tadaaki Kaneko ◽  
Noboru Ohtani ◽  
...  

2009 ◽  
Vol 615-617 ◽  
pp. 113-116 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Kazuo Arai

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.


2020 ◽  
Vol 7 (6) ◽  
pp. 1036-1045 ◽  
Author(s):  
Zhangyun Liu ◽  
Zheng Chen ◽  
Jinyang Xi ◽  
Xin Xu

Abstract Non-covalent interactions between ions and π systems play an important role in molecular recognition, catalysis and biology. To guide the screen and design for artificial hosts, catalysts and drug delivery, understanding the physical nature of ion–π complexes via descriptors is indispensable. However, even with multiple descriptors that contain the leading term of electrostatic and polarized interactions, the quantitative description for the binding energies (BEs) of ion–π complexes is still lacking because of the intrinsic shortcomings of the commonly used descriptors. Here, we have shown that the impartment of orbital details into the electrostatic energy (coined as OEE) makes an excellent single descriptor for BEs of not only spherical, but also multiply-shaped, ion–π systems, highlighting the importance of an accurate description of the electrostatic interactions. Our results have further demonstrated that OEEs from a low-level method could be calibrated to BEs from a high-level method, offering a powerful practical strategy for an accurate prediction of a set of ion–π interactions.


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