Higher harmonic generation in laser plasma upon interaction of femtosecond laser pulses with doubly and singly charged ions under conditions of resonance frequency conversion of laser radiation

2008 ◽  
Vol 104 (2) ◽  
pp. 258-268 ◽  
Author(s):  
R. A. Ganeev ◽  
L. B. Elouga Bom ◽  
T. Ozaki
2007 ◽  
Vol 17 (03) ◽  
pp. 571-576
Author(s):  
A. GLADUN ◽  
V. LEIMAN ◽  
A. ARSENIN ◽  
O. MANNOUN ◽  
V. TARAKANOV

We present numerical investigation of anomalous internal photoelectric effect which is realized in thin film (< 100 nm) structures by surface plasmon (SP) excitation and its interaction with primary laser radiation. SP electric field gain and electron temperature in the SP field have been calculated.


1991 ◽  
Vol 43 (8) ◽  
pp. 4564-4567 ◽  
Author(s):  
T. Engers ◽  
W. Fendel ◽  
H. Schüler ◽  
H. Schulz ◽  
D. von der Linde

2000 ◽  
Vol 18 (1) ◽  
pp. 57-59 ◽  
Author(s):  
Zhu Chang-Jun ◽  
Qin Yuan-Dong ◽  
Yang Hong ◽  
Wang Shu-Feng ◽  
Gong Qi-Huang

2006 ◽  
Author(s):  
S. V. Zabotnov ◽  
I. A. Ostapenko ◽  
L. A. Golovan ◽  
V. Yu. Timoshenko ◽  
P. K. Kashkarov ◽  
...  

Author(s):  
A. Tarasevitch ◽  
C. Dietrich ◽  
C. Blome ◽  
K. Sokolowski-Tinten ◽  
D. von der Linde

2020 ◽  
Vol 312 ◽  
pp. 192-199
Author(s):  
Dmitrii V. Shuleiko ◽  
Mikhail N. Martyshov ◽  
Danila V. Orlov ◽  
Denis E. Presnov ◽  
Stanislav V. Zabotnov ◽  
...  

Anisotropic periodic relief in form of ripples was formed on surface of amorphous hydrogenated silicon (a-Si:H) films by femtosecond laser pulses with the wavelength of 1.25 μm. The orientation of the surface structures relative to laser radiation polarization vector depended on the number of laser pulses N acting on the film surface. When N = 30, the structures with 0.88 μm period were formed orthogonal to the laser radiation polarization; at N = 750 the surface structures had period of 1.12 μm and direction parallel to the polarization. The conductivity of the laser-modified a-Si:H films increased by 3 to 4 orders of magnitude, up to 3.8·10–5 (Ω∙cm)–1, due to formation of nanocrystalline Si phase with a volume fraction from 17 to 30%. Anisotropy of the dark conductivity, as well as anisotropy of the photoconductivity spectral dependences was observed in the modified films due to depolarizing influence of periodic microscale relief and uneven distribution of nanocrystalline Si phase within such laser-induced structure.


2005 ◽  
Vol 22 (8) ◽  
pp. 1913-1915 ◽  
Author(s):  
Wang Run-Hai ◽  
Jiang Hong-Bing ◽  
Yang Hong ◽  
Wu Cheng-Yin ◽  
Gong Qi-Huang

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