Linear low-temperature dependence of the surface impedance of a Ba0.6K0.4BiO3 single crystal

JETP Letters ◽  
1996 ◽  
Vol 64 (11) ◽  
pp. 832-838 ◽  
Author(s):  
M. R. Trunin ◽  
A. A. Zhukov ◽  
G. É. Tsydynzhapov ◽  
A. T. Sokolov ◽  
L. A. Klinkova ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Surface Impedance

Temperature dependence of the work function of Bi2Sr2CaCu2O8 single crystal cleaved at low temperature

2005 ◽  
Vol 252 (2) ◽  
pp. 379-384 ◽  
Author(s):  
S. Saito ◽  
T. Sutou ◽  
Y. Norimitsu ◽  
N. Yajima ◽  
Y. Uhara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Work Function

scholarly journals Crystal Structure and Dielectric Property of Endohedral Lithium Fullerene

2014 ◽  
Vol 70 (a1) ◽  
pp. C195-C195
Author(s):  
Shinobu Aoyagi ◽  
Kunihisa Sugimoto ◽  
Hiroshi Okada ◽  
Norihisa Hoshino ◽  
Tomoyuki Akutagawa
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Dielectric Property ◽  
Low Temperature ◽  
Dielectric Permittivity ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Structure Analysis ◽  
X Ray ◽  
Dielectric Phase

Endohedral lithium fullerene Li+@C60 can have a dielectric polarization by the off-centered location of the Li+ cation inside the C60 cage. The x-ray structure analysis of the PF6– salt [Li@C60](PF6) revealed that the Li+ cation occupies two off-centered equivalent positions at 20 K and hence the crystal is non-polar [1]. The disordered structure at low temperature is explained by a static orientation disorder of polar Li+@C60 cations and/or a dynamic tunneling of the Li+ cation inside the C60 cage. The Li+ tunneling would be suppressed by an intermolecular interaction at lower temperature and a dielectric phase transition might be induced. We reveal the dielectric property and crystal structure of [Li@C60](PF6) below 20 K in this study. The temperature dependence of the dielectric permittivity was measured for the single crystal down to 9 K. The dielectric permittivity increases with decreasing temperature according to the Curie-Weiss law. Such a behavior was also observed in H2O@C60 crystal but not in empty C60 crystal [2]. No dielectric phase transition was observed in H2O@C60 down to 8 K. In contrast, a dielectric anomaly suggesting a phase transition was observed in [Li@C60](PF6) around 18 K. The single-crystal x-ray diffraction experiment below 20 K was also performed at SPring-8 BL02B1. The crystal has a cubic structure at 20 K [1]. The temperature dependence of the cubic lattice constant shows no anomaly around 18 K. However, diffraction peaks that are forbidden for the given structure appear below 18 K. Thus the crystal symmetry is lowered by the dielectric phase transition. We present the result of the crystal structure analysis of the newly discovered low-temperature phase.

Synthesis and Thermoelectric Properties of NaxCo2O4 Single Crystals

2005 ◽  
Vol 886 ◽  
Author(s):  
Jian He ◽  
Kelvin Aaron ◽  
Edward Abbott ◽  
Joseph Kolis ◽  
Terry M. Tritt
Keyword(s):  
Thermal Conductivity ◽  
High Temperature ◽  
Low Temperature ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Free Path ◽  
Mean Free Path ◽  
Flux Method ◽  
Different Types

ABSTRACTSingle crystal NaCo2O4 platelets with sizes up to 6mm were synthesized by the typical high temperature NaCl flux method. The in-plane thermopower α and in-plane resistivity ρ were measured to be ∼100µV/K and 0.3mΩ-cm at 300K, respectively. The in-plane thermal conductivity κ was measured by our custom-designed “PTC” system and found to be ∼5 W-m−1K−1 at 300K, which is 2-3 times larger than the polycrystalline NaCo2O4. The in-plane phonon mean free path lph was estimated to be ∼9.5Å, which is much smaller than the in-plane mean free path of conducting carriers (la∼51Å). A novel low temperature flux method where NaCl/NaOH was used as flux and metallic Co powders as Co source was developed to successfully synthesize Na-deficient NaxCo2O4 crystals with size up to 6mm at low temperature of 550°C. The different temperature dependence in resistivity reveals that two different types of crystals can exist, one is metallic and another is semiconducting. The temperature dependence of the measured k is like that of a disordered solid and the value is found to be ∼7 W-m−1K−1 at 300K.

ФОРМИРОВАНИЕ ПЕРЕХОДНОГО СЛОЯ ALN НА ТЕМПЛЕЙТАХ 3С-SIC/SI(111) МЕТОДОМ АММИАЧНОЙ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 148-153
Author(s):  
С.Д. Федотов ◽  
А.В. Бабаев ◽  
В.Н. Стаценко ◽  
К.А. Царик ◽  
В.К. Неволин
Keyword(s):  
Crystal Structure ◽  
Growth Rate ◽  
Low Temperature ◽  
Surface Morphology ◽  
Single Crystal ◽  
Root Mean Square Roughness ◽  
Rate Variation ◽  
Mean Square ◽  
Nucleation Layer ◽  
Low Temperature Epitaxy

Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.

Low temperature acoustic characterization of PMN single crystal

2017 ◽  
Vol 122 (8) ◽  
pp. 084103 ◽  
Author(s):  
E. Smirnova ◽  
A. Sotnikov ◽  
S. Ktitorov ◽  
H. Schmidt
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Acoustic Characterization

Spin-crossover iron(II) long-chain complex with slow spin equilibrium at low temperature

2021 ◽  
Author(s):  
Qi Zhao ◽  
Jin-Peng Xue ◽  
Zhi-Kun Liu ◽  
Zi-Shuo Yao ◽  
Jun Tao
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Spin Crossover ◽  
Chain Complex ◽  
Mononuclear Complex ◽  
X Ray ◽  
Alkyl Chains ◽  
Long Chain

A mononuclear complex with long alkyl chains, [FeII(H2Bpz2)2(C9bpy)] (1; H2Bpz2 = dihydrobis(1-pyrazolyl)borate, C9bpy = 4,4'-dinonyl-2,2'-bipyridine), was synthesized. Single-crystal X-ray crystallographic studies revealed that - and - forms of the complex...

The Microscopic Structure Of Shallow Donors In Silicon Carbide

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Double Resonance ◽  
Epr Spectra ◽  
Electron Nuclear Double Resonance ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
Temperature Spectra ◽  
Electron Paramagnetic

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.

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