The Effect of γ Radiation on the Temperature Dependence of the Surface Generation Velocity at a Si–SiO[sub 2] Interface

2005 ◽  
Vol 31 (4) ◽  
pp. 288
Author(s):  
P. B. Parchinskiı̆
Keyword(s):  
Temperature Dependence ◽  
Surface Generation ◽  
Γ Radiation ◽  
Surface Generation Velocity

A Microscopic Study of Motions in Supercooled 1,3-Butanediol

1984 ◽  
Vol 39 (3) ◽  
pp. 282-287 ◽  
Author(s):  
M. Soltwisch ◽  
F. Schneider ◽  
D. Quitmann
Keyword(s):  
Temperature Dependence ◽  
Microscopic Study ◽  
Relative Intensity ◽  
Correlation Time ◽  
Rayleigh Scattering ◽  
Central Line ◽  
Γ Radiation ◽  
Diffusional Motion ◽  
Molecular Dimensions ◽  
Fast Motions

AbstractQuasielastic Rayleigh scattering of 14.4 keV Mössbauer γ-radiation has been measured on 1,3-butanediol, yielding the width Γ of the central line (assumed to be Lorentzian) and its relative intensity, for momentum transfers corresponding to molecular dimensions (k = 0.9... 2.5 Å-1) at 243 K. Γ (k) rises fast and then saturates. An effective correlation time τ and jump width is derived characterizing the diffusional motion of individual molecules considered as entities. Fast motions (vibrations, librations) are taken into account explicitly. The correlation time τ compares well with results from other experiments. The temperature dependence was followed from 208 up to 263 K.

Carrier Lifetime Reduction by Ion Implantation into Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
A. Mdgro-Campero ◽  
R.P. Love
Keyword(s):  
Ion Implantation ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Surface Generation ◽  
In Doping ◽  
Versatile Tool ◽  
Surface Generation Velocity ◽  
Generation Lifetime ◽  
Penetration Depths

ABSTRACTIon implantation is emerging as a versatile tool for the control of carrier lifetime in silicon. We present results on the use of argon and proton implantations to reduce lifetime. Particle energies used imply submicron penetration depths into the silicon. We find that within the first micrometer from the surface, the generation lifetime can be reduced by several orders of magnitude, and varies inversely with dose. A change in doping concentration was found only at the highest dose used (1014 cm−2). Effects of the implantations on surface generation velocity and oxide charges were also studied.

SCINTILLATION DECAY IN CALCIUM TUNGSTATE

1965 ◽  
Vol 43 (11) ◽  
pp. 1925-1933 ◽  
Author(s):  
M. Sayer ◽  
W. R. Hardy
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Decay Time ◽  
Luminescence Decay ◽  
Luminescence Decay Time ◽  
Γ Radiation ◽  
Calcium Tungstate ◽  
Γ Ray ◽  
Nonradiative Centers

Measurements of the luminescence decay time have been made for a number of single crystals of calcium tungstate for excitation by cathode rays, α and γ radiation. The value of the decay time was found to depend both on the crystal used and on the nature of the excitation. For γ-ray excitation, the decay time was in the range 6.1 to 6.8 μ sec. The values obtained for cathode-ray excitation were, in general, 20–30% higher for all crystals, while for α excitation, several crystals showed no change in decay time, while others showed a decay time 20% faster. Measurements of the temperature dependence of the decay time and thermoluminescence experiments indicate that these differences in behavior can be attributed to differences in the density of energy traps and nonradiative centers in the crystal and to a rise in temperature in the excited channel.

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