Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal–Quantum-Confined Semiconductor Heterostructures

2005 ◽  
Vol 39 (1) ◽  
pp. 17 ◽  
Author(s):  
N. V. Baı̆dus’
Keyword(s):  
Oxide Layer ◽  
Semiconductor Heterostructures ◽  
Quantum Confined

Light-Induced Drift of Quantum-Confined Electrons in Semiconductor Heterostructures

1990 ◽  
Author(s):  
Mark I. Stockman ◽  
Lakshmi N. Pandey ◽  
Thomas F. George
Keyword(s):  
Semiconductor Heterostructures ◽  
Quantum Confined

Light-induced drift of quantum-confined electrons in semiconductor heterostructures

1990 ◽  
Vol 65 (27) ◽  
pp. 3433-3436 ◽  
Author(s):  
Mark I. Stockman ◽  
Lakshmi N. Pandey ◽  
Thomas F. George
Keyword(s):  
Semiconductor Heterostructures ◽  
Quantum Confined

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Sign in / Sign up

Export Citation Format

Share Document