Electrical properties and luminescence spectra of light-emitting diodes based on InGaN/GaN heterostructures with modulation-doped quantum wells

2003 ◽  
Vol 37 (9) ◽  
pp. 1107-1113 ◽  
Author(s):  
S. S. Mamakin ◽  
A. É. Yunovich ◽  
A. B. Wattana ◽  
F. I. Manyakhin
Keyword(s):  
Electrical Properties ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Luminescence Spectra ◽  
Light Emitting

The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells

1998 ◽  
Vol 3 ◽  
Author(s):  
A. E. Yunovich ◽  
V. E. Kudryashov ◽  
A. N. Turkin ◽  
A. Kovalev ◽  
F. Manyakhin
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Luminescence Spectra ◽  
Multiple Quantum ◽  
Tunnel Current ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Low Probability

Luminescence spectra of Light Emitting Diodes (LEDs) with Multiple Quantum Wells (MQWs) were studied at currents J = 0.15 μA - 150 mA. A high quantum efficiency at low J is caused by a low probability of the tunnel current J (which is maximum at Jm ≈ 0.5-1.0 mA). J(V) curves were measured in the range J= 10−12-10−1 A; at J > 10−3A they may be approximated by a sum of four parts: V= φk+ mkT·[ln(J/J0)+(J/J1)0.5] + J·Rs. The part V ~ (J/J1)0.5is the evidence of a double-injection into i-layers near MQWs. Their presence is confirmed by capacitance measurements. An overflow of carriers through the MQW causes a lower quantum efficiency at high J. A model of a 2D-density of states with exponential tails fits the spectra. The value of T in the active layer was estimated. A new band was detected at high J; it can be caused by non-uniformity of In content in MQWs.

Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells

1997 ◽  
Vol 31 (9) ◽  
pp. 901-907 ◽  
Author(s):  
K. G. Zolina ◽  
V. E. Kudryashov ◽  
A. N. Turkin ◽  
A. É. Yunovich
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Luminescence Spectra ◽  
Light Emitting

scholarly journals Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents

1998 ◽  
Vol 3 ◽  
Author(s):  
F. Manyakhin ◽  
A. Kovalev ◽  
A. E. Yunovich
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Defect Formation ◽  
Hot Electrons ◽  
Luminescence Spectra ◽  
Single Quantum ◽  
Light Emitting ◽  
Long Period ◽  
Aging Mechanisms ◽  
Two Stages

Changes of luminescence spectra and electrical properties of light-emitting diodes (LED’s) based on InGaN/AlGaN/GaN heterostructures were investigated over a long period of operation. Blue and green LED’s with InGaN single quantum wells were studied at currents up to 80 mA for 102−2.103 hours. An increase of luminescence intensity at operating currents of 15 mA was detected at the 1st stage of aging (100−800 hours) and a slow fall was detected in the 2nd stage. Greater changes of spectra were observed at low currents (< 0.15 mA). A study of charged acceptor distribution in the space charge region has shown that at the 1st stage their concentration grows, and in the 2nd stage, it falls. The models for the two stages are proposed: 1) activation of Mg due to destruction of residual Mg-H complexes; 2) formation of donor vacancies N. A model of defect formation by hot electrons injected into the quantum well is discussed.

Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells

1999 ◽  
Vol 33 (4) ◽  
pp. 429-434 ◽  
Author(s):  
V. E. Kudryashov ◽  
A. N. Turkin ◽  
A. É. Yunovich ◽  
A. N. Kovalev ◽  
F. I. Manyakhin
Keyword(s):  
Electrical Properties ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting

Electrical Properties and Luminescence Spectra of Light-Emitting Diodes with Modulated Doped InGaN/GaN Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
A.E. Yunovich ◽  
S.S. Mamakin ◽  
M.V. Lomonosov ◽  
F.I. Manyakhin ◽  
A.B. Wattana ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Debye Length ◽  
Green Light ◽  
Luminescence Spectra ◽  
Multiple Quantum ◽  
Energy Diagram ◽  
Light Emitting ◽  
Charge Distributions ◽  
Piezoelectric Fields

AbstractCharge distributions N(z) and electroluminescence spectra of blue and green light-emitting diodes (LEDs) based on InGaN/AlGaN/GaN heterostructures with multiple quantum wells. MQWs were modulated doped by Si donors in GaN barriers, electrons from donors being in InGaN wells. N(z) were determined using dynamical capacitance (C-V) method. Acceptor and donor concentrations near the p-n- junction were approximately NA ≥1.1019 cm-3 >> ND ≥ 1.1018 cm-3. Functions N(z) have periodic maxima and minima; their number was 4 and a period of 10 %15 nm, according to the details of growth. The extrema reflect charge distributions in MQWs on the n-side of the junctions with accuracy in z of the order of the Debye length (2-3 nm). An energy diagram of the structures is calculated according these measurements. Shifts of spectral maxima with current (J = 10-6 – 3.10-2 A) for these LEDs are comparatively low (3-12 meV for blue LEDs and 20-50 meV for green ones), much less than for previously studied green LEDs (up to 150 meV). This behavior is explained by screening of piezoelectric fields by electrons in the wells. Quantum efficiency versus current is correlated with N(z) distributions and currentvoltage characteristics of the LEDs.

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

2008 ◽  
Vol 1 ◽  
pp. 021101 ◽  
Author(s):  
Lai Wang ◽  
Jiaxing Wang ◽  
Hongtao Li ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Injection Efficiency ◽  
Light Emitting
Sign in / Sign up

Export Citation Format

Share Document