High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures
Keyword(s):
2002 ◽
Vol 46
(12)
◽
pp. 2041-2044
◽
Keyword(s):
1993 ◽
Vol 140
(1)
◽
pp. 75
◽
2015 ◽
Vol 42
(3)
◽
pp. 88-92
◽