The effect of high-temperature epitaxial SiC layer growth on the structure of porous silicon carbide

2001 ◽  
Vol 35 (2) ◽  
pp. 153-157 ◽  
Author(s):  
N. S. Savkina ◽  
V. V. Ratnikov ◽  
V. B. Shuman
2008 ◽  
Vol 34 (9) ◽  
pp. 731-733 ◽  
Author(s):  
M. G. Mynbaeva ◽  
E. N. Mokhov ◽  
A. A. Lavrent’ev ◽  
K. D. Mynbaev

2000 ◽  
Vol 39 (9) ◽  
pp. 3264-3271 ◽  
Author(s):  
Varaporn Suwanmethanond ◽  
Edward Goo ◽  
Paul K. T. Liu ◽  
George Johnston ◽  
Muhammad Sahimi ◽  
...  

2021 ◽  
Author(s):  
Giulia Tuci ◽  
Yuefeng Liu ◽  
Andrea Rossin ◽  
Xiangyun Guo ◽  
Charlotte Pham ◽  
...  

2010 ◽  
Vol 256 (18) ◽  
pp. 5629-5639 ◽  
Author(s):  
A. Keffous ◽  
N. Gabouze ◽  
A. Cheriet ◽  
Y. Belkacem ◽  
A. Boukezzata

2006 ◽  
Vol 26 (9) ◽  
pp. 1715-1724 ◽  
Author(s):  
Juliane Mentz ◽  
Marcus Müller ◽  
Meinhard Kuntz ◽  
Georg Grathwohl ◽  
Hans Peter Buchkremer ◽  
...  

2005 ◽  
Vol 202 (8) ◽  
pp. 1548-1551 ◽  
Author(s):  
A. M. Rossi ◽  
F. Giorgis ◽  
V. Ballarini ◽  
S. Borini

Sign in / Sign up

Export Citation Format

Share Document