Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix

2001 ◽  
Vol 27 (1) ◽  
pp. 14-16 ◽  
Author(s):  
G. É. Cirlin ◽  
P. Werner ◽  
G. Gösele ◽  
B. V. Volovik ◽  
V. M. Ustinov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Matrix ◽  
Germanium Clusters

Structure and Optical Properties of ZnO Nanowire Arrays Grown by Plasma-assisted Molecular Beam Epitaxy

2012 ◽  
Vol 27 (3) ◽  
pp. 301-304 ◽  
Author(s):  
Zhi-Yuan ZHENG ◽  
Tie-Xin CHEN ◽  
Liang CAO ◽  
Yu-Yan HAN ◽  
Fa-Qiang XU
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays

Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Optical properties of InAs/AlSb superlattices grown by gas source molecular beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 310-314 ◽  
Author(s):  
S.G. Kim ◽  
H. Asahi ◽  
M. Seta ◽  
K. Asami ◽  
S. Gonda ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source

Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy

2015 ◽  
Vol 425 ◽  
pp. 186-190 ◽  
Author(s):  
W.C. Fan ◽  
S.H. Huang ◽  
W.C. Chou ◽  
M.H. Tsou ◽  
C.S. Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Sign in / Sign up

Export Citation Format

Share Document