Simulation of phase transitions induced in gallium arsenide by combined laser radiation

2001 ◽  
Vol 46 (1) ◽  
pp. 59-62 ◽  
Author(s):  
S. P. Zhvavyi ◽  
G. D. Ivlev ◽  
O. L. Sadovskaya
Keyword(s):  
Gallium Arsenide ◽  
Phase Transitions ◽  
Laser Radiation

Phase Transitions in Gold Contacts to Gallium Arsenide

1984 ◽  
Vol 37 ◽  
Author(s):  
Edward Beam ◽  
D. D. L. Chung
Keyword(s):  
Gallium Arsenide ◽  
Phase Transitions ◽  
Peritectic Transformation ◽  
Complete Dissolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Heating And Cooling ◽  
Similar Phase ◽  
Gold Contacts

AbstractX-ray diffraction was used in situ to study the phase transitions which occurred in 1500 Å Au/GaAs(100) upon heating and cooling. The reaction between Au and GaAs took the form Au + Ga → α Au-Ga. Upon heating, α Au-Ga completely dissolved in liquid Au-Ga. Upon subsequent cooling, β Au-Ga (or Au7Ga2) formed. In 1 atm of nitrogen, phase transitions were observed reversibly at 525 ± 25°C (due to the complete dissolution of α Au-Ga upon heating) and 415 ± 5°C (due to the peritectic transformation of β Au-Ga to α Au-Ga and liquid Au-Ga upon heating). In a vacuum of 425 μ (0.031 Kg/2m) similar phase transitions were observed at 425 ± 25°C and 387 ± 13°C, respectively.

scholarly journals Phase transitions in erbium-doped silicon exposed to laser radiation

2009 ◽  
Vol 76 (2) ◽  
pp. 209-214 ◽  
Author(s):  
R. I. Batalov ◽  
R. M. Bayazitov ◽  
D. I. Kryzhkov ◽  
P. I. Gajduk ◽  
E. I. Gatskevich ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Laser Radiation ◽  
Erbium Doped ◽  
Doped Silicon

Optically-Induced, Room-Temperature Oxidation of Gallium Arsenide

1986 ◽  
Vol 75 ◽  
Author(s):  
Chien-Fan Yu ◽  
Michael T. Schmidt ◽  
Dragan V. Podlesnik ◽  
Richard M. Osgood
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Laser Radiation ◽  
Visible Light ◽  
Room Temperature ◽  
Water Molecules ◽  
Temperature Oxidation ◽  
Near Ultraviolet ◽  
Deep Ultraviolet ◽  
Optically Induced

AbstractRoom-temperature, optically-induced oxidation of the gallium arsenide surface has been studied with laser radiation of different wavelengths. It was found that deep-ultraviolet light is much more effective in enhancing oxidation than near-ultraviolet or visible light. The growth rate of the oxide was also found to be drastically increased by the presence of chemisorbed water molecules on the surface.

Investigation of phase transitions in a system of Cd–Hg–Te solid solutions in a powerful laser radiation field

2016 ◽  
Vol 7 (1) ◽  
pp. 1-8
Author(s):  
O. M. Kugayenko ◽  
B. R. Senatulin ◽  
I. M. Karnaukh ◽  
V. S. Petrakov ◽  
K. A. Shcherbakov ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Laser Radiation ◽  
Radiation Field ◽  
Solid Solutions ◽  
Powerful Laser ◽  
Laser Radiation Field

Special features of the periodic-pulse-train laser radiation confinement in doped gallium arsenide and zinc selenide

2002 ◽  
Vol 28 (1) ◽  
pp. 48-49 ◽  
Author(s):  
O. P. Mikheeva ◽  
A. I. Sidorov ◽  
A. S. Khaiikina ◽  
E. V. Chuguevets
Keyword(s):  
Gallium Arsenide ◽  
Laser Radiation ◽  
Zinc Selenide ◽  
Pulse Train ◽  
Periodic Pulse

Structural and phase transitions in technically pure iron under influence of laser radiation

1992 ◽  
Author(s):  
Arunas Amulevicius ◽  
M. Balciuniene ◽  
Bronius Petretis ◽  
D. Juzakenas
Keyword(s):  
Phase Transitions ◽  
Laser Radiation ◽  
Pure Iron
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