Infrared tomography of the charge-carrier lifetime and diffusion length in semiconductor-grade silicon ingots

2001 ◽  
Vol 35 (1) ◽  
pp. 40-47 ◽  
Author(s):  
V. D. Akhmetov ◽  
N. V. Fateev
Author(s):  
О.Г. Грушка ◽  
С.М. Чупыра ◽  
С.В. Биличук ◽  
О.А. Парфенюк

AbstractThe results of investigations of electrical, optical, and photoelectric properties of CdIn_2Te^4 crystals, which were grown by the Bridgman method are presented. It is shown that electrical conductivity is determined mainly by electrons with the effective mass m _ n = 0.44 m _0 and the mobility 120–140 cm^2/(V s), which weakly depends on temperature. CdIn_2Te_4 behaves as a partially compensated semiconductor with the donor-center ionization energy E _ d = 0.38 eV and the compensation level K = N _ a / N _ d = 0.36. The absorption-coefficient spectra at the energy hν < E _ g = 1.27 eV are subject to the Urbach rule with a typical energy of 18–25 meV. The photoconductivity depends on the sample thickness. The diffusion length, the charge-carrier lifetime, and the surface-recombination rate are determined from the photoconductivity spectra.


Solar RRL ◽  
2021 ◽  
Author(s):  
Bernd Steinhauser ◽  
Tim Niewelt ◽  
Armin Richter ◽  
Rebekka Eberle ◽  
Martin Schubert

2017 ◽  
Vol 7 (22) ◽  
pp. 1701536 ◽  
Author(s):  
Ji-Wook Jang ◽  
Dennis Friedrich ◽  
Sönke Müller ◽  
Marlene Lamers ◽  
Hannes Hempel ◽  
...  

2019 ◽  
Vol 96 ◽  
pp. 155-162 ◽  
Author(s):  
P.C. Klipstein ◽  
Y. Benny ◽  
S. Gliksman ◽  
A. Glozman ◽  
E. Hojman ◽  
...  

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