Magnetotransport properties of a ballistic ring interferometer on the basis of a GaAs quantum well with a high concentration of 2D electron gas

JETP Letters ◽  
2000 ◽  
Vol 72 (4) ◽  
pp. 209-212 ◽  
Author(s):  
A. A. Bykov ◽  
A. K. Bakarov ◽  
L. V. Litvin ◽  
A. I. Toropov
Keyword(s):  
Quantum Well ◽  
Electron Gas ◽  
High Concentration ◽  
2D Electron Gas ◽  
Ring Interferometer

Ring interferometer on the basis of 2D electron gas in a double quantum well

JETP Letters ◽  
2003 ◽  
Vol 78 (9) ◽  
pp. 560-563
Author(s):  
A. A. Bykov ◽  
D. V. Nomokonov ◽  
A. K. Bakarov ◽  
A. I. Toropov ◽  
O. Estibals ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Gas ◽  
Double Quantum ◽  
2D Electron Gas ◽  
Ring Interferometer ◽  
Double Quantum Well

Small ring interferometer on the basis of a GaAs quantum well with a high density 2D electron gas

2002 ◽  
Vol 12 (1-4) ◽  
pp. 778-781 ◽  
Author(s):  
A.A. Bykov ◽  
O. Estibals ◽  
I.V. Marchishin ◽  
L.V. Litvin ◽  
A.K. Bakarov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Gas ◽  
High Density ◽  
Small Ring ◽  
2D Electron Gas ◽  
Ring Interferometer

Exchange Enhancement of g-Factor in Narrow-Gap InAs/AlSb Quantum Well Heterostructures

2012 ◽  
Vol 190 ◽  
pp. 554-557 ◽  
Author(s):  
S.S. Krishtopenko ◽  
V.I. Gavrilenko ◽  
M. Goiran
Keyword(s):  
Quantum Well ◽  
Landau Level ◽  
Electron Gas ◽  
Semiconductor Heterostructures ◽  
Electron Interaction ◽  
Narrow Gap ◽  
G Factor ◽  
2D Electron Gas ◽  
Level Width ◽  
Exchange Enhancement

We report on the study of exchange enhancement of g-factor in 2D electron gas in n-type narrow-gap semiconductor heterostructures that feature a strong nonparabolicity of electric subbands. We demonstrate that exchange g-factor enhancement not only shows maxima at odd values of Landau level filling factors but, due to subband nonparabolicity, persists at even filling factor values as well. The magnitude of the exchange enhancement, the amplitude and shape of the g-factor oscillations are governed by both the screening of electron-electron interaction and the Landau level width. The enhanced g-factor values calculated for 2D electron gas in InAs/AlSb quantum well heterostructures are compared with previous experimental magnetotransport data.

Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures

2010 ◽  
Vol 645-648 ◽  
pp. 259-262
Author(s):  
Alexander A. Lebedev ◽  
Pavel L. Abramov ◽  
Elena V. Bogdanova ◽  
Sergey Y. Davydov ◽  
Sergey P. Lebedev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Energy Range ◽  
Temperature Dependence ◽  
Band Gap ◽  
Liquid Nitrogen ◽  
Electron Mobility ◽  
Electron Gas ◽  
2D Electron Gas ◽  
Pl Spectra

Photoluminescence (PL) spectra of 3C-SiC(n,p)/6H-SiC(n) and 3C-SiC(p)/15R-SiC(n) heterostructures have been studied. A broad structureless band, absent in PL spectra of n–n heterostructures, was observed in the spectrum of p–n heterostructures in the energy range 2.2–2.4 eV. It is suggested that this band is due to the presence of a 2D electron gas in a quantum well near the heterointerface. High (~ 4000 cm2/s V) value of electron mobility and the absence of any significant fall in the mobility temperature dependence at liquid-nitrogen temperatures confirm the existence of a 2DEG in the QW at the heterointerface.

Quantum Hall liquid-insulator and plateau-to-plateau transitions in a high mobility 2D electron gas in an HgTe quantum well

JETP Letters ◽  
2007 ◽  
Vol 84 (10) ◽  
pp. 565-569 ◽  
Author(s):  
E. B. Olshanetsky ◽  
S. Sassine ◽  
Z. D. Kvon ◽  
N. N. Mikhailov ◽  
S. A. Dvoretsky ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Mobility ◽  
2D Electron Gas
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