Negative differential resistance of a tunnel diode induced by an external microwave signal

1999 ◽  
Vol 25 (1) ◽  
pp. 58-59 ◽  
Author(s):  
D. A. Usanov ◽  
S. B. Venig ◽  
V. E. Orlov
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Tunnel Diode ◽  
Microwave Signal

Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal

2000 ◽  
Vol 34 (5) ◽  
pp. 550-554 ◽  
Author(s):  
D. A. Usanov ◽  
A. V. Skripal’ ◽  
N. V. Ugryumova ◽  
S. B. Venig ◽  
V. E. Orlov
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Tunnel Diode ◽  
Microwave Signal

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

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