The role of impact ionization in the formation of reverse current-voltage characteristics of Al-SiO2-n-Si tunnel structures

2000 ◽  
Vol 34 (7) ◽  
pp. 775-780
Author(s):  
M. I. Vexler ◽  
I. V. Grekhov ◽  
A. F. Shulekin
Keyword(s):  
Impact Ionization ◽  
Reverse Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Effect of WO3 Doping on Microstructural and Electrical Properties of ZnO-Pr6O11 Based Varistor Materials

2013 ◽  
Vol 591 ◽  
pp. 54-60
Author(s):  
Xiu Li Fu ◽  
Yan Xu Zang ◽  
Zhi Jian Peng
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Grain Growth ◽  
Doping Level ◽  
Nonlinear Coefficient ◽  
Current Voltage ◽  
Average Grain Size ◽  
Current Voltage Characteristics ◽  
Voltage Performance

The effect of WO3doping on microstructural and electrical properties of ZnO-Pr6O11based varistor materials was investigated. The doped WO3plays a role of inhibitor in ZnO grain growth, resulting in decreased average grain size from 2.68 to 1.68 μm with increasing doping level of WO3from 0 to 0.5 mol%. When the doping level of WO3was lower than 0.05 mol%, the nonlinear current-voltage characteristics of the obtained varistors could be improved significantly with increasing amount of WO3doped. But when the doping level of WO3became higher, their nonlinear current-voltage performance would be dramatically deteriorated when more WO3was doped. The optimum nonlinear coefficient, varistor voltage, and leakage current of the samples were about 13.71, 710 V/mm and 13 μA/cm2, respectively, when the doping level of WO3was in the range from 0.03 to 0.05 mol%.

The Influence of the Magnetic Field on the Current-Voltage Characteristics of CuPc Nanowires

2019 ◽  
Vol 970 ◽  
pp. 75-81
Author(s):  
Alexey Zavgorodniy ◽  
Aitbek Aimukhanov ◽  
Assylbek Zeinidenov ◽  
Galina Vavilova
Keyword(s):  
Magnetic Field ◽  
Carrier Transport ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Photosensitive Cell ◽  
Positively Charged

The role of spin states in the process of charge carrier transport in copper phthalocyanine (CuPc) nanowires has been established. According to the data obtained, CuPc nanowires are in the η-phase. The current-voltage characteristics (IVC) of a photosensitive cell based on CuPc nanowires in a magnetic field are investigated. As a result of experiments, it was found that applying an external magnetic field, the spins of two positively charged polarons are oriented in one direction. The channel of formation of the bipolaron is blocked. As a result, a decrease in the short-circuit current of the photosensitive cell is observed by more than 61%.

High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 1339-1342 ◽  
Author(s):  
Michael E. Levinshtein ◽  
Pavel A. Ivanov ◽  
Mykola S. Boltovets ◽  
Valentyn A. Krivutsa ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Deep Level ◽  
Reverse Current ◽  
Differential Resistance ◽  
Base Resistance ◽  
Small Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Increasing Temperature ◽  
Surface Leakage ◽  
And Diffusion

Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range Т = 300 – 773 К. Analysis of the forward current-voltage characteristics and reverse current recovery waveforms shows that the lifetimeτ of non-equilibrium carriers in the base of the diodes steadily increases with temperature across the entire temperature interval. The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, Rd. As a result, Rd is virtually temperature independent. An appreciable modulation of the base resistance takes place at room temperature even at a relatively small current density j of 20 A/cm2. At T = 800 K and j = 20 A/cm2, a very deep level of the base modulation has been observed. The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed 2×10-6 А at T = 773 K and a reverse bias of 300 V.

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