Erratum: Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs [Semiconductors 32, 484–487 (May 1998)]; Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GAas [Semiconductors 32, 479–483 (May 1998)]
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1974 ◽
Vol 4
(2)
◽
pp. 172-177
1979 ◽
Vol 9
(4)
◽
pp. 498-500
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1989 ◽
Vol 19
(3)
◽
pp. 324-327
1986 ◽
Vol 16
(11)
◽
pp. 1463-1466
◽
1988 ◽
Vol 18
(5)
◽
pp. 651-657
1976 ◽
Vol 6
(1)
◽
pp. 79-81
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