Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

1997 ◽  
Vol 31 (8) ◽  
pp. 813-814 ◽  
Author(s):  
K. M. Doshchanov
Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1922 ◽  
Author(s):  
Lunzhi Li ◽  
Lisheng Zhong ◽  
Kai Zhang ◽  
Jinghui Gao ◽  
Man Xu

There is a long-standing puzzle concerning whether polyethylene blends are a suitable substitution for cable-insulation-used crosslinking polyethylene (XLPE) especially at elevated temperatures. In this paper, we investigate temperature dependence of mechanical, electrical properties of blends with 70 wt % linear low density polyethylene (LLDPE) and 30 wt % high density polyethylene (HDPE) (abbreviated as 70 L-30 H). Our results show that the dielectric loss of 70 L-30 H is about an order of magnitude lower than XLPE, and the AC breakdown strength is 22% higher than XLPE at 90 °C. Moreover, the dynamic mechanical thermal analysis (DMA) measurement and hot set tests suggest that the blends shows optimal mechanical properties especially at high temperature with considerable temperature stability. Further scanning electron microscope (SEM) observation and X-ray diffraction (XRD) analysis uncover the reason for the excellent high temperature performance and temperature stability, which can be ascribed to the uniform fine-spherulite structure in 70 L-30 H blends with high crystallinity sustaining at high temperature. Therefore, our findings may enable the potential application of the blends as cable insulation material with higher thermal-endurance ability.


Author(s):  
Takuto Kojima ◽  
Yoshio Ohshita ◽  
Tomihisa Tachibana ◽  
Atsushi Ogura ◽  
Masafumi Yamaguchi

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.


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