Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution

1997 ◽  
Vol 31 (8) ◽  
pp. 763-767 ◽  
Author(s):  
T. I. Voronina ◽  
T. S. Lagunova ◽  
M. P. Mikhailova ◽  
K. D. Moiseev ◽  
M. A. Sipovskaya ◽  
...  
Nature ◽  
1944 ◽  
Vol 153 (3887) ◽  
pp. 530-530
Author(s):  
A. N. CAMPBELL
Keyword(s):  

Author(s):  
А.А. Семакова ◽  
В.В. Романов ◽  
Н.Л. Баженов ◽  
К.Д. Мынбаев ◽  
К.Д. Моисеев

The results of a study of the electroluminescence of the asymmetric InAs/InAs1−ySby/InAsSbP LED heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y=0.15 and y=0.16 in the temperature range 4.2−300 K are presented. Based on the experimental data, the formation of a staggered type II heterojunction at the InAs1−ySby/InAsSbP heterointerface was determined. The dominant contribution of the interface radiative transitions at the type II heterointerface in the temperature range 4.2−180 K was shown, which makes it possible to minimize the temperature dependence of the operating wavelength of the LEDs.


2017 ◽  
Vol 308 ◽  
pp. 173-180 ◽  
Author(s):  
Julia Wind ◽  
Paula Kayser ◽  
Zhaoming Zhang ◽  
Ivana Radosavljevic Evans ◽  
Chris D. Ling
Keyword(s):  

2006 ◽  
Vol 88 (23) ◽  
pp. 232107 ◽  
Author(s):  
A. Ohtomo ◽  
J. Nishimura ◽  
Y. Murakami ◽  
M. Kawasaki

2013 ◽  
Vol 06 (05) ◽  
pp. 1340010 ◽  
Author(s):  
WOLFGANG G. ZEIER ◽  
TRISTAN DAY ◽  
EUGEN SCHECHTEL ◽  
G. JEFFREY SNYDER ◽  
WOLFGANG TREMEL

In this paper, we describe the synthesis and characterization of the solid solution Cu 2 Zn 1-x Fe x GeSe 4. Electronic transport data have been analyzed using a single parabolic band model and have been compared to Cu 2+x Zn 1-x GeSe 4. The effective mass of these undoped, intrinsically hole conducting materials increases linearly with increasing carrier concentration, showing a non-parabolic transport behavior within the valence band.


2008 ◽  
Vol 310 (23) ◽  
pp. 4846-4849 ◽  
Author(s):  
K.D. Moiseev ◽  
V.V. Romanov ◽  
T.I. Voronina ◽  
T.S. Lagunova ◽  
M.P. Mikhailova ◽  
...  

Catalysts ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1340
Author(s):  
Angelina V. Zhurenok ◽  
Dina V. Markovskaya ◽  
Evgeny Y. Gerasimov ◽  
Alexander S. Vokhmintsev ◽  
Ilya A. Weinstein ◽  
...  

Two types of photocatalysts, 1%Pt/Cd1−xZnxS/g-C3N4 (x = 0.2–0.3) and Cd1−xZnxS/1%Pt/g-C3N4 (x = 0.2–0.3), were synthesized by varying the deposition order of platinum, and a solid solution of cadmium and zinc sulfides onto the surface of g-C3N4. The characterization of photocatalysts showed that, for 1%Pt/Cd1−xZnxS/g-C3N4, small platinum particles were deposited onto a solid solution of cadmium and zinc sulfides; in the case of Cd1−xZnxS/1%Pt/g-C3N4, enlarged platinum clusters were located on the surface of graphitic carbon nitride. Based on the structure of the photocatalysts, we assumed that, in the first case, type II heterojunctions and, in the latter case, S-scheme heterojunctions were realized. The activity of the synthesized samples was tested in hydrogen evolution from triethanolamine (TEOA) basic solution under visible light (λ = 450 nm). A remarkable increase in hydrogen evolution rate compared to single-phase platinized 1%Pt/Cd1−xZnxS photocatalysts was observed only in the case of ternary photocatalysts with platinum located on the g-C3N4 surface, Cd1−xZnxS/1%Pt/g-C3N4. Thus, we proved using kinetic experiments and characterization techniques that, for composite photocatalysts based on Cd1−xZnxS and g-C3N4, the formation of the S-scheme mechanism is more favorable than that for type II heterojunction. The highest activity, 2.5 mmol H2 g−1 h−1, with an apparent quantum efficiency equal to 6.0% at a wavelength of 450 nm was achieved by sample 20% Cd0.8Zn0.2S/1% Pt/g-C3N4.


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