scholarly journals Growth, behavior, and textural sector zoning of biotite porphyroblasts during regional metamorphism and the implications for interpretation of inclusion trails: Insights from the Pequop Mountains and Wood Hills, Nevada, USA

Geosphere ◽  
2009 ◽  
Vol 5 (3) ◽  
pp. 215-251 ◽  
Author(s):  
Phyllis A. Camilleri
Keyword(s):  
Regional Metamorphism ◽  
Growth Behavior ◽  
Sector Zoning ◽  
Inclusion Trails ◽  
Wood Hills

New age data on the low-temperature regional metamorphism of Mt. Medvednica (Croatia)

2006 ◽  
Vol 49 (3) ◽  
pp. 207-221 ◽  
Author(s):  
Katalin Judik ◽  
Kadosa Balogh ◽  
Darko Tibljaš ◽  
Péter Árkai
Keyword(s):  
Low Temperature ◽  
Regional Metamorphism ◽  
New Age

INDALLOY 160-190

Alloy Digest ◽  
1984 ◽  
Vol 33 (1) ◽  
Keyword(s):  
Physical Properties ◽  
Tensile Properties ◽  
Precision Measurement ◽  
Heat Treating ◽  
Spray Forming ◽  
Growth Behavior ◽  
Temperature Range

Abstract INDALLOY 160-190 is a bismth-base low-melting alloy that melts through th temperature range 160-190 F. It shrinks immediately upon solidification, grows back to zero in about one hour and then shows additional growth. This shrinkage-growth behavior makes it an ideal alloy for proof casting and precision measurement of internal dimensions. This alloy originally was developed for use by children for casting soldiers and other small objects. It performs best among the low-melting alloys for spraying in the spray forming of masks and molds and in metallizing. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on casting, heat treating, machining, and joining. Filing Code: Bi-34. Producer or source: Indium Corporation of America.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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