Spatiotemporal characterization of the field-induced insulator-to-metal transition

Science ◽  
2021 ◽  
pp. eabd9088
Author(s):  
Javier del Valle ◽  
Nicolas M. Vargas ◽  
Rodolfo Rocco ◽  
Pavel Salev ◽  
Yoav Kalcheim ◽  
...  

Many correlated systems feature an insulator-to-metal transition that can be triggered by an electric field. Although it is known that metallization takes place through filament formation, the details of how this process initiates and evolves remain elusive. We use in-operando optical reflectivity to capture the growth dynamics of the metallic phase with space and time resolution. We demonstrate that filament formation is triggered by nucleation at hotspots, with a subsequent expansion over several decades in time. By comparing three case studies (VO2, V3O5 and V2O3), we identify the resistivity change across the transition as the crucial parameter governing this process. Our results provide a spatiotemporal characterization of volatile resistive switching in Mott insulators, key for emerging technologies such as optoelectronics or neuromorphic computing.

2021 ◽  
Vol 109 ◽  
pp. 103537
Author(s):  
Li Cai ◽  
Qiang Hu ◽  
Jianguo Wang ◽  
Xin Zou ◽  
Quanxin Li ◽  
...  

2000 ◽  
Vol 73 (1-3) ◽  
pp. 230-234 ◽  
Author(s):  
M Ichimura ◽  
M Hirano ◽  
A Tada ◽  
E Arai ◽  
H Takamatsu ◽  
...  

2007 ◽  
Vol 17 (01) ◽  
pp. 173-176 ◽  
Author(s):  
BARBAROS ASLAN ◽  
LESTER F. EASTMAN ◽  
WILLIAM J. SCHAFF ◽  
XIAODONG CHEN ◽  
MICHAEL G. SPENCER ◽  
...  

We present the experimental development and characterization of GaN ballistic diodes for THz operation. Fabricated devices have been described and gathered experimental data is discussed. The major problem addressed is the domination of the parasitic resistances which significantly reduce the accelerating electric field across the ballistic region (intrinsic layer).


AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097181 ◽  
Author(s):  
Ghada H. Dushaq ◽  
Amro Alkhatib ◽  
Mahmoud S. Rasras ◽  
Ammar M. Nayfeh

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