One-pot room-temperature conversion of cyclohexane to adipic acid by ozone and UV light

Science ◽  
2014 ◽  
Vol 346 (6216) ◽  
pp. 1495-1498 ◽  
Author(s):  
Kuo Chu Hwang ◽  
Arunachalam Sagadevan
Keyword(s):  
Adipic Acid ◽  
Room Temperature ◽  
Uv Light ◽  
Acid Synthesis ◽  
Acid Oxidation ◽  
One Pot ◽  
Uv Light Irradiation ◽  
Free Process ◽  
Solid Precipitate ◽  
Nitric Acid Oxidation

Nitric acid oxidation of cyclohexane accounts for ~95% of the worldwide adipic acid production and is also responsible for ~5 to 8% of the annual worldwide anthropogenic emission of the ozone-depleting greenhouse gas nitrous oxide (N2O). Here we report a N2O-free process for adipic acid synthesis. Treatment of neat cyclohexane, cyclohexanol, or cyclohexanone with ozone at room temperature and 1 atmosphere of pressure affords adipic acid as a solid precipitate. Addition of acidic water or exposure to ultraviolet (UV) light irradiation (or a combination of both) dramatically enhances the oxidative conversion of cyclohexane to adipic acid.

UV-Light-Induced Dehydrogenative N-Acylation of Amines with 2-Nitrobenzaldehydes to Give 2-Aminobenzamides

Synthesis ◽  
2022 ◽  
Author(s):  
Dishu Zeng ◽  
Tianbao Yang ◽  
Niu Tang ◽  
Wei Deng ◽  
Jiannan Xiang ◽  
...  
Keyword(s):  
Amino Acid ◽  
Organic Synthesis ◽  
Efficient Method ◽  
Building Block ◽  
Room Temperature ◽  
Uv Light ◽  
Amino Acid Derivatives ◽  
One Pot ◽  
Plausible Mechanism ◽  
High Yields

A simple, mild, green and efficient method for the synthesis of 2-aminobenzamides was highly desired in organic synthesis. Herein, we developed an efficient, one-pot strategy for the synthesis of 2-aminobenzamides with high yields irradiated by UV light. 32 examples proceeded successfully by this photo-induced protocol. The yield reached up to 92%. The gram scale was also achieved easily. This building block could be applied in the preparation of quinazolinones derivatives. Amino acid derivatives could be employed smoothly at room temperature. Finally, a plausible mechanism was proposed.

UV-Light Irradiation Effect on Room-Temperature-Processed ZnO/p-Si

2007 ◽  
Vol 51 (12) ◽  
pp. 115 ◽  
Author(s):  
Yu-Jin KANG ◽  
Chea-Ryong CHO ◽  
Se-Young JEONG ◽  
Hong-Seung KIM ◽  
Hyung-Soo AHN
Keyword(s):  
Room Temperature ◽  
Uv Light ◽  
Light Irradiation ◽  
Irradiation Effect ◽  
Uv Light Irradiation

In situ growth and optical gas adsorption performance of Zn(ii) metal–organic framework membranes at room temperature

The Analyst ◽  
2019 ◽  
Vol 144 (16) ◽  
pp. 4887-4896 ◽  
Author(s):  
Mariyemu Tuergong ◽  
Patima Nizamidin ◽  
Abliz Yimit ◽  
Rena Simayi
Keyword(s):  
Room Temperature ◽  
Gas Adsorption ◽  
Uv Light ◽  
Metal Organic Framework ◽  
Adsorption Behaviors ◽  
Uv Light Irradiation ◽  
Unit Surface ◽  
Metal Organic ◽  
First Time

The optical gas adsorption behaviors of [Zn2(bdc)2(dpNDI)]n membranes were studied for the first time. Under UV light irradiation, they exhibited a greater adsorption response to xylene gas with adsorption capacity of 6.46 μg cm−2 per unit surface.

scholarly journals Formation of MgO:LiNbO3 Domain-Inverted Gratings by Voltage Application under UV Light Irradiation at Room Temperature

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
Masatoshi Fujimura ◽  
Toshiaki Suhara
Keyword(s):  
Nonlinear Optic ◽  
Room Temperature ◽  
Uv Light ◽  
Lateral Expansion ◽  
Cladding Layer ◽  
Uv Light Irradiation ◽  
Voltage Application ◽  
Formation Method ◽  
Domain Inversion ◽  
Photolithography Process

MgO:LiNbO3 is an attractive nonlinear-optic crystal for quasiphasematched (QPM) nonlinear-optic devices. This paper reports a new formation method of domain-inverted gratings for QPM in MgO:LiNbO3. Domain inversion of MgO:LiNbO3 by voltage application under UV light was characterized, and reduction of the voltage required for inversion was demonstrated. Results of voltage application under periodic UV light suggested that suppression of excess lateral expansion of the domain inverted regions on −Z surface was crucial for domain-inverted grating formation. Voltage application to a crystal with a photoconductive cladding layer under periodic UV light was proposed. The cladding layer suppressed the expansion, and the domain-inverted gratings with period of 18 μm and area of 25×5 mm2 were obtained. The formation method does not require the photolithography process and allows the formation by voltage application at room temperature, and therefore, is quite simple and productive.

scholarly journals Semiconductor-type SnO2-based NO2 sensors operated at room temperature under UV-light irradiation

2017 ◽  
Vol 253 ◽  
pp. 630-640 ◽  
Author(s):  
Takeo Hyodo ◽  
Kaoru Urata ◽  
Kai Kamada ◽  
Taro Ueda ◽  
Yasuhiro Shimizu
Keyword(s):  
Room Temperature ◽  
Uv Light ◽  
Light Irradiation ◽  
Uv Light Irradiation ◽  
Semiconductor Type

Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature

Open Physics ◽  
2010 ◽  
Vol 8 (6) ◽  
Author(s):  
Takashi Iwata ◽  
Taketoshi Matsumoto ◽  
Sumio Terakawa ◽  
Hikaru Kobayashi
Keyword(s):  
Nitric Acid ◽  
Room Temperature ◽  
Oxidation Mechanism ◽  
The Other ◽  
Acid Oxidation ◽  
Al2o3 Layer ◽  
Transmission Electron ◽  
Vertically Aligned ◽  
Nitric Acid Oxidation ◽  
And Diffusion

AbstractA thick Al2O3/aluminum (Al) structure has been fabricated by oxidation of Al with 68wt% and 98wt% nitric acid (HNO3) aqueous solutions at room temperature. Measurements of the Al2O3 thickness vs. the oxidation time show that reaction and diffusion are the rate-determining steps for oxidation with 68wt% and 98wt% HNO3 solutions, respectively. Observation of transmission electron micrographs shows that the Al2O3 layer formed with 68wt% HNO3 has a structure with cylindrically shaped pores vertically aligned from the Al2O3 surface to the Al2O3/Al interface. Due to the porous structure, diffusion of HNO3 proceeds easily, resulting in the reaction-limited oxidation mechanism. In this case, the Al2O3/Al structure is considerably rough. The Al2O3 layer formed with 98wt% HNO3 solutions, on the other hand, possesses a denser structure without pores, and the Al2O3/Al interface is much smoother, but the thickness of the Al2O3 layer formed on crystalline Al regions is much smaller than that on amorphous Al regions. Due to the relatively uniform Al2O3 thickness, the leakage current density flowing through the Al2O3 layer formed with 68wt% HNO3 is lower than that formed with 98wt% HNO3.

scholarly journals Trifluoroacetic Acid Hydroxylamine System as Organocatalyst Reagent in a One-Pot Salt Free Process for the Synthesis of Caprolactam and Amides of Industrial Interest

2021 ◽  
Author(s):  
F. Manente ◽  
L. Pietrobon ◽  
L. Ronchin ◽  
A. Vavasori
Keyword(s):  
Trifluoroacetic Acid ◽  
Room Temperature ◽  
Beckmann Rearrangement ◽  
One Pot ◽  
Free Process ◽  
Hydrogenation Reactions ◽  
One Step ◽  
The One ◽  
Industrial Relevance

AbstractIn this work we studied the reactivity of the Trifluoroacetic acid hydroxylamine system in the one step salt free synthesis of amides from ketones. A particular regards was paid to the caprolactam synthesis because of its industrial relevance. Synthesis, reactivity and characterization of the hydroxylamine trifluoroacetate is given. Fast oximation reaction of several ketones was gained at room temperature (1 h of reaction quantitative conversion for several ketones). In the same reactor, by raising the temperature at 383 K, the Beckmann rearrangement of the so obtained oximes is easily accomplished in the presence of three equivalent of TFA. The possibility of obtaining the trifluoroacetate of the hydroxylamine with a modified nitric acid hydrogenation reactions was verified, too. Reuse of solvent and trifluoroacetic acid is easily achieved by distillation. Graphical abstract Salt free one-pot caprolactam and amides process catalyzed by CF3COOH, in the presence of NH2OH TFA as the oximation agent.

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