Carbon Nanotubes: Present and Future Commercial Applications

Science ◽  
2013 ◽  
Vol 339 (6119) ◽  
pp. 535-539 ◽  
Author(s):  
Michael F. L. De Volder ◽  
Sameh H. Tawfick ◽  
Ray H. Baughman ◽  
A. John Hart
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Chemical Modification ◽  
Production Capacity ◽  
Rechargeable Batteries ◽  
Large Area ◽  
Automotive Parts ◽  
Sporting Goods ◽  
Commercial Applications ◽  
Water Filters

Worldwide commercial interest in carbon nanotubes (CNTs) is reflected in a production capacity that presently exceeds several thousand tons per year. Currently, bulk CNT powders are incorporated in diverse commercial products ranging from rechargeable batteries, automotive parts, and sporting goods to boat hulls and water filters. Advances in CNT synthesis, purification, and chemical modification are enabling integration of CNTs in thin-film electronics and large-area coatings. Although not yet providing compelling mechanical strength or electrical or thermal conductivities for many applications, CNT yarns and sheets already have promising performance for applications including supercapacitors, actuators, and lightweight electromagnetic shields.

Theory of Nanocomposite Network Transistors for Macroelectronics Applications

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 466-470 ◽  
Author(s):  
M.A. Alam ◽  
N. Pimparkar ◽  
S. Kumar ◽  
J. Murthy
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Silicon Nanowires ◽  
Percolation Theory ◽  
Thin Film Transistors ◽  
Large Area ◽  
Novel Materials ◽  
New Class ◽  
Spatial Geometry ◽  
Key Features

AbstractA new class of nanocomposite network materials based on carbon nanotubes or silicon nanowires for thin-film transistors promises significant improvement in the performance of large-area electronics, or macroelectronics. Evaluation of this novel materials technology requires the development of device models. A multicomponent heterogeneous stick-percolation theory is used to show that the key features of this new transistor technology are the consequences of the percolating spatial geometry of the nanosticks (nanotubes, nanorods, or nanowires) that form the channel.

Large-Area Flexible Printed Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotubes for NO2 Sensors

2020 ◽  
Vol 12 (46) ◽  
pp. 51797-51807
Author(s):  
Xin Wang ◽  
Miaomiao Wei ◽  
Xiaoqian Li ◽  
Shuangshuang Shao ◽  
Yunfei Ren ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Thin Film Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Large Area ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Vacuum processed large area doped thin-film crystals: A new approach for high-performance organic electronics

2021 ◽  
Vol 17 ◽  
pp. 100352
Author(s):  
S.-J. Wang ◽  
M. Sawatzki ◽  
H. Kleemann ◽  
I. Lashkov ◽  
D. Wolf ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
High Performance ◽  
Large Area ◽  
New Approach

Advanced large area characterization of thin-film solar modules by electroluminescence and thermography imaging techniques

2015 ◽  
Vol 135 ◽  
pp. 35-42 ◽  
Author(s):  
A. Gerber ◽  
V. Huhn ◽  
T.M.H. Tran ◽  
M. Siegloch ◽  
Y. Augarten ◽  
...  
Keyword(s):  
Thin Film ◽  
Imaging Techniques ◽  
Large Area
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