Carbon Nanotube Single-Electron Transistors at Room Temperature

Science ◽  
2001 ◽  
Vol 293 (5527) ◽  
pp. 76-79 ◽  
Author(s):  
H. W. Ch. Postma
Keyword(s):  
Carbon Nanotube ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

ChemInform Abstract: Carbon Nanotube Single-Electron Transistors at Room Temperature.

ChemInform ◽  
2010 ◽  
Vol 32 (43) ◽  
pp. no-no ◽  
Author(s):  
Henk W. Ch. Postma ◽  
Tijs Teepen ◽  
Zhen Yao ◽  
Milena Grifoni ◽  
Cees Dekker
Keyword(s):  
Carbon Nanotube ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Room-Temperature Carbon Nanotube Single-Electron Transistors with Mechanical Buckling-Defined Quantum Dots

2018 ◽  
Vol 4 (5) ◽  
pp. 1700628 ◽  
Author(s):  
Jian Zhang ◽  
Siyu Liu ◽  
Lingyuan Kong ◽  
Jean Pierre Nshimiyimana ◽  
Xiao Hu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carbon Nanotube ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Mechanical Buckling ◽  
Electron Transistors

Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process

2008 ◽  
Vol 47 (4) ◽  
pp. 2036-2039 ◽  
Author(s):  
Shin Iwasaki ◽  
Masatoshi Maeda ◽  
Takafumi Kamimura ◽  
Kenzo Maehashi ◽  
Yasuhide Ohno ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Room Temperature ◽  
Single Electron ◽  
Plasma Process ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

2017 ◽  
Vol 28 (12) ◽  
pp. 125208 ◽  
Author(s):  
Zahid A K Durrani ◽  
Mervyn E Jones ◽  
Chen Wang ◽  
Dixi Liu ◽  
Jonathan Griffiths
Keyword(s):  
Excited States ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Nano-Scale Silicon Quantum Dot-Based Single-Electron Transistors and Their Application to Design of Analog-to-Digital Convertors at Room Temperature

2017 ◽  
Vol 26 (12) ◽  
pp. 1750201
Author(s):  
Hamed Aminzadeh ◽  
Mohammad Ali Dashti ◽  
Mohammad Miralaei
Keyword(s):  
Quantum Dot ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Symmetric Functions ◽  
Single Electron ◽  
Stable Operation ◽  
Single Electron Transistors ◽  
Analog To Digital ◽  
Temperature Range ◽  
Electron Transistors

Room-temperature analog-to-digital converters (ADCs) based on nanoscale silicon (Si) quantum dot (QD)-based single-electron transistors (SETs) can be very attractive for high-speed processors embedded in future generation nanosystems. This paper focuses on the design and modeling of advanced single-electron converters suited for operation at room temperature. In contrast to conventional SETs with metallic QD, the use of sub-10-nm Si QD results in stable operation at room temperature, as the observable Coulomb blockade regime covers effectively the higher temperature range. Si QD-based SETs are also fully compatible with advanced CMOS technology and they can be manufactured using routine nanofabrication steps. At first, we present the principles of operation of Si SETs used for room-temperature operation. Possible flash-type ADC architectures are then investigated and the design considerations of possible Coulomb oscillation regimes are addressed. A modified design procedure is then introduced for [Formula: see text]-bit SET-based ADCs, and validated through simulation of a 3-bit ADC with a sampling frequency of 5 GS/s. The ADC core is comprised from a capacitive signal divider followed by three periodic symmetric functions (PSFs). Simulation results demonstrate the stability of output signals at the room-temperature range.

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