Ion sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors
Keyword(s):
1998 ◽
Vol 118
(12)
◽
pp. 1417-1426
◽
2019 ◽
2016 ◽
Vol 227
◽
pp. 210-218
◽
2013 ◽
Vol 110
◽
pp. 762-771
◽
Keyword(s):
2015 ◽
Vol 7
(18)
◽
pp. 9866-9878
◽
2014 ◽
Vol 48
◽
pp. 61-64
◽