scholarly journals Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

2021 ◽  
Vol 7 (52) ◽  
Author(s):  
Tianlun Yu ◽  
John Wright ◽  
Guru Khalsa ◽  
Betül Pamuk ◽  
Celesta S. Chang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Offsets

Band offsets and electronic structure of SiC/SiO2interfaces

1996 ◽  
Vol 79 (6) ◽  
pp. 3108-3114 ◽  
Author(s):  
V. V. Afanas’ev ◽  
M. Bassler ◽  
G. Pensl ◽  
M. J. Schulz ◽  
E. Stein von Kamienski
Keyword(s):  
Electronic Structure ◽  
Band Offsets

Atomic structure, electronic structure, and band offsets at Ge:GeO:GeO2 interfaces

2010 ◽  
Vol 97 (24) ◽  
pp. 242902 ◽  
Author(s):  
L. Lin ◽  
K. Xiong ◽  
J. Robertson
Keyword(s):  
Electronic Structure ◽  
Atomic Structure ◽  
Band Offsets

Electronic structure and energy band offsets for ultrathin silicon nitride on Si(1 0 0)

2003 ◽  
Vol 216 (1-4) ◽  
pp. 252-257 ◽  
Author(s):  
Seiichi Miyazaki ◽  
Masahiro Narasaki ◽  
Atushi Suyama ◽  
Masanori Yamaoka ◽  
Hideki Murakami
Keyword(s):  
Electronic Structure ◽  
Silicon Nitride ◽  
Energy Band ◽  
Band Offsets

Atomic Structure, Band Offsets and Hydrogen in High K oxide:Silicon interfaces

2002 ◽  
Vol 747 ◽  
Author(s):  
J Robertson ◽  
P W Peacock
Keyword(s):  
Dielectric Constant ◽  
Electronic Structure ◽  
Atomic Structure ◽  
High Dielectric Constant ◽  
Dangling Bond ◽  
Charge Neutrality ◽  
Band Offsets ◽  
High K ◽  
Bulk Charge ◽  
High Dielectric

AbstractThe bonding, electronic structure and valence band offsets are calculated for various atomic models of interfaces between Si and high dielectric constant insulators ZrO2 and SrTiO3. A non-polar face of the oxide does not necessarily give a semiconducting interface, because of the need to fill Si dangling bond states on the Si side. This can be achieved by stoichiometry changes. Band offsets of semiconducting interfaces are generally the same as those found from bulk charge neutrality levels, indicating no dipole layers. Dipole layers are present at some configurations, where the offset is then changed by up to 1 eV. The states of hydrogen in the oxides are also considered.

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