scholarly journals Quasiparticle interference and quantum confinement in a correlated Rashba spin-split 2D electron liquid

2021 ◽  
Vol 7 (15) ◽  
pp. eabd7361
Author(s):  
Chi Ming Yim ◽  
Dibyashree Chakraborti ◽  
Luke C. Rhodes ◽  
Seunghyun Khim ◽  
Andrew P. Mackenzie ◽  
...  
Keyword(s):  
Electric Fields ◽  
Coherence Length ◽  
Spin Splitting ◽  
Spin Coherence ◽  
Spin Orbital ◽  
Selection Rules ◽  
Quasiparticle Interference ◽  
Correlated Electron ◽  
Rashba Spin ◽  
Spin Texture

Exploiting inversion symmetry breaking (ISB) in systems with strong spin-orbit coupling promises control of spin through electric fields—crucial to achieve miniaturization in spintronic devices. Delivering on this promise requires a two-dimensional electron gas with a spin precession length shorter than the spin coherence length and a large spin splitting so that spin manipulation can be achieved over length scales of nanometers. Recently, the transition metal oxide terminations of delafossite oxides were found to exhibit a large Rashba spin splitting dominated by ISB. In this limit, the Fermi surface exhibits the same spin texture as for weak ISB, but the orbital texture is completely different, raising questions about the effect on quasiparticle scattering. We demonstrate that the spin-orbital selection rules relevant for conventional Rashba system are obeyed as true spin selection rules in this correlated electron liquid and determine its spin coherence length from quasiparticle interference imaging.

scholarly journals All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Anamul Md. Hoque ◽  
Dmitrii Khokhriakov ◽  
Klaus Zollner ◽  
Bing Zhao ◽  
Bogdan Karpiak ◽  
...  
Keyword(s):  
Electric Fields ◽  
Room Temperature ◽  
Theoretical Calculations ◽  
Spin Splitting ◽  
Pristine Graphene ◽  
Out Of Plane ◽  
New States ◽  
Process Measurements ◽  
Spin Texture ◽  
And Control

AbstractThe ability to engineer new states of matter and control their spintronic properties by electric fields is at the heart of future information technology. Here, we report a gate-tunable spin-galvanic effect in van der Waals heterostructures of graphene with a semimetal of molybdenum ditelluride at room temperature due to an efficient spin-charge conversion process. Measurements in different device geometries with control over the spin orientations exhibit spin-switch and Hanle spin precession behavior, confirming the spin origin of the signal. The control experiments with the pristine graphene channels do not show any such signals. We explain the experimental spin-galvanic signals by theoretical calculations considering the spin-orbit induced spin-splitting in the bands of the graphene in the heterostructure. The calculations also reveal an unusual spin texture in graphene heterostructure with an anisotropic out-of-plane and in-plane spin polarization. These findings open opportunities to utilize graphene-based heterostructures for gate-controlled spintronic devices.

scholarly journals Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yan Li ◽  
Yang Li ◽  
Peng Li ◽  
Bin Fang ◽  
Xu Yang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Room Temperature ◽  
Theoretical Calculations ◽  
Ferromagnetic Layer ◽  
Spin Splitting ◽  
New Paradigm ◽  
Rashba Spin ◽  
Rashba Spin Splitting ◽  
Fundamental Insight ◽  
Insight Into

AbstractNonmagnetic Rashba systems with broken inversion symmetry are expected to exhibit nonreciprocal charge transport, a new paradigm of unidirectional magnetoresistance in the absence of ferromagnetic layer. So far, most work on nonreciprocal transport has been solely limited to cryogenic temperatures, which is a major obstacle for exploiting the room-temperature two-terminal devices based on such a nonreciprocal response. Here, we report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states. The combination of the band structure measurements and theoretical calculations strongly suggest that the nonreciprocal response is ascribed to the giant bulk Rashba spin splitting rather than the surface Rashba states. Remarkably, we find that the magnitude of the nonreciprocal response shows an unexpected non-monotonical dependence on temperature. The extended theoretical model based on the second-order spin–orbit coupled magnetotransport enables us to establish the correlation between the nonlinear magnetoresistance and the spin textures in the Rashba system. Our findings offer significant fundamental insight into the physics underlying the nonreciprocity and may pave a route for future rectification devices.

First-principles prediction of inversion-asymmetric topological insulator in hexagonal BiPbH monolayer

2016 ◽  
Vol 4 (37) ◽  
pp. 8750-8757 ◽  
Author(s):  
Yi-zhen Jia ◽  
Wei-xiao Ji ◽  
Chang-wen Zhang ◽  
Ping Li ◽  
Miao-juan Ren ◽  
...  
Keyword(s):  
Topological Insulator ◽  
First Principles ◽  
Condensed Matter ◽  
Spin Splitting ◽  
Condensed Matter Physics ◽  
Rashba Spin ◽  
Rashba Spin Splitting

Band topology and Rashba spin splitting (RSS) are two extensively explored yet exotic properties in condensed matter physics.

scholarly journals Strain-enhanced giant Rashba spin splitting in ultrathin KTaO3 films for spin-polarized photocurrents

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44088-44095
Author(s):  
Ning Wu ◽  
Xue-Jing Zhang ◽  
Bang-Gui Liu
Keyword(s):  
First Principles ◽  
Biaxial Stress ◽  
Spin Splitting ◽  
Semiconductor Surfaces ◽  
Surfaces And Interfaces ◽  
Rashba Spin ◽  
Spin Polarized ◽  
Rashba Spin Splitting

Strong Rashba effects at semiconductor surfaces and interfaces have attracted attention for exploration and applications. We show with first-principles investigation that applying biaxial stress can cause tunable and giant Rashba effects in ultrathin KTaO3 (KTO) (001) films.

SPIN-SPLITTING OF THE BOUND POLARON'S GROUND STATE BINDING ENERGY INDUCED BY THE RASHBA SPIN–ORBIT INTERACTION UNDER THE PERPENDICULAR MAGNETIC FIELD

2008 ◽  
Vol 22 (12) ◽  
pp. 1923-1932
Author(s):  
JIA LIU ◽  
ZI-YU CHEN
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Binding Energy ◽  
Ground State ◽  
Spin Splitting ◽  
Perpendicular Magnetic Field ◽  
Spin Orbit ◽  
Ground State Binding Energy ◽  
Bound Polaron ◽  
Rashba Spin

The influence of a perpendicular magnetic field on a bound polaron near the interface of a polar–polar semiconductor with Rashba effect has been investigated. The material is based on a GaAs / Al x Ga 1-x As heterojunction and the Al concentration varying from 0.2 ≤ x ≤ 0.4 is the critical value below which the Al x Ga 1-x As is a direct band gap semiconductor.The external magnetic field strongly altered the ground state binding energy of the polaron and the Rashba spin–orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splitting of the ground state binding energy of the bound polaron. How the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity and the electron area density have been shown in this paper, taking into account the SO coupling. The contribution of the phonons are also considered. It is found that the spin-splitting states of the bound polaron are more stable, and, in the condition of weak magnetic field, the Zeeman effect can be neglected.

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