scholarly journals Artificial visual systems enabled by quasi–two-dimensional electron gases in oxide superlattice nanowires

2020 ◽  
Vol 6 (46) ◽  
pp. eabc6389
Author(s):  
You Meng ◽  
Fangzhou Li ◽  
Changyong Lan ◽  
Xiuming Bu ◽  
Xiaolin Kang ◽  
...  

Rapid development of artificial intelligence techniques ignites the emerging demand on accurate perception and understanding of optical signals from external environments via brain-like visual systems. Here, enabled by quasi–two-dimensional electron gases (quasi-2DEGs) in InGaO3(ZnO)3 superlattice nanowires (NWs), an artificial visual system was built to mimic the human ones. This system is based on an unreported device concept combining coexistence of oxygen adsorption-desorption kinetics on NW surface and strong carrier quantum-confinement effects in superlattice core, to resemble the biological Ca2+ ion flux and neurotransmitter release dynamics. Given outstanding mobility and sensitivity of superlattice NWs, an ultralow energy consumption down to subfemtojoule per synaptic event is realized in quasi-2DEG synapses, which rivals that of biological synapses and now available synapse-inspired electronics. A flexible quasi-2DEG artificial visual system is demonstrated to simultaneously perform high-performance light detection, brain-like information processing, nonvolatile charge retention, in situ multibit-level memory, orientation selectivity, and image memorizing.

2021 ◽  
Vol 555 ◽  
pp. 149516
Author(s):  
Jacek J. Kolodziej ◽  
Dawid Wutke ◽  
Jakub Lis ◽  
Natalia Olszowska

1996 ◽  
Vol 40 (1-8) ◽  
pp. 413-415 ◽  
Author(s):  
N Turner ◽  
J.T Nicholls ◽  
E.H Linfield ◽  
K.M Brown ◽  
M Pepper ◽  
...  

2021 ◽  
Vol 5 (6) ◽  
Author(s):  
Ting-Ting Wang ◽  
Sining Dong ◽  
Zhi-Li Xiao ◽  
Chong Li ◽  
Wen-Cheng Yue ◽  
...  

2021 ◽  
Vol 104 (4) ◽  
Author(s):  
B. Horn-Cosfeld ◽  
J. Schluck ◽  
J. Lammert ◽  
M. Cerchez ◽  
T. Heinzel ◽  
...  

1999 ◽  
Vol 595 ◽  
Author(s):  
B. Shen ◽  
T. Someya ◽  
O. Moriwaki ◽  
Y. Arakawa

AbstractPhotoluminescence (PL) of modulation-doped Al0.22Ga0.78N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free excitons (FE) emission in GaN. The peak can be observed at temperatures as high as 80 K. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al0.12Ga0.88N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. The energy separation of the 2DEG peak and the GaN FE emission decreases with increasing temperature. Meanwhile, the 2DEG peak energy increases with increasing excitation intensity. These results are attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface, which becomes stronger when temperature or excitation intensity is increased.


2003 ◽  
Vol 33 (5-6) ◽  
pp. 347-356 ◽  
Author(s):  
Axel Lorke ◽  
Stefan Böhm ◽  
Werner Wegscheider

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