scholarly journals Vanadium spin qubits as telecom quantum emitters in silicon carbide

2020 ◽  
Vol 6 (18) ◽  
pp. eaaz1192 ◽  
Author(s):  
Gary Wolfowicz ◽  
Christopher P. Anderson ◽  
Berk Diler ◽  
Oleg G. Poluektov ◽  
F. Joseph Heremans ◽  
...  

Solid-state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here, we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O band, with brightness allowing cavity-free detection in a wafer-scale material. In vanadium ensembles, we characterize the complex d1 orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Last, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid state for quantum applications.

2006 ◽  
Author(s):  
M. V. Gurudev Dutt ◽  
L. Childress ◽  
E. Togan ◽  
J. M. Taylor ◽  
L. Jiang ◽  
...  

1992 ◽  
Vol 7 (5) ◽  
pp. 1253-1265 ◽  
Author(s):  
T.C. Chou ◽  
A. Joshi

Solid state interfacial reactions of Ti3Al with Si3N4 and SiC have been studied via both bulk and thin film diffusion couples at temperatures of 1000 and 1200 °C. The nature of reactions of Ti3Al with Si3N4 and SiC was found to be similar. Only limited reactions were detected in samples reacted at 1000 °C. In the Ti3Al/Si3N4, layered reaction products consisting of mainly titanium silicide(s), titanium-silicon-aluminide, and titanium-silicon-nitride were formed; in the Ti3Al/SiC, the reaction product was primarily titanium-silicon-carbide. In both cases, silicon was enriched near the surface region, and aluminum was depleted from the reacted region. Reactions at 1200 °C resulted in a drastic change of the Si distribution profiles; the enrichment of Si in near surface regions was no longer observed, and the depletion of Al became more extensive. Titanium nitride and titanium-silicon-carbide were the major reaction products in the Ti3Al/Si3N4 and Ti3Al/SiC reactions, respectively. Mechanisms of driving the variation of Si, N, and C diffusion behavior (as a function of temperature) and the depletion of Al from the diffusion zone are suggested. It is proposed that reactions of Ti3Al with Si3N4 and SiC lead to in situ formation of a diffusion barrier, which limits the diffusion kinetics and further reaction. The thermodynamic driving force for the Ti3Al/Si3N4 reactions is discussed on the basis of Gibbs free energy.


Author(s):  
M. M. Glazov

This chapter is devoted to one of key phenomena in the field of spin physics, namely, resonant absorption of electromagnetic waves under conditions where the Zeeman splitting of spin levels in magnetic field is equal to photon energy. This method is particularly important for identification of nuclear spin effects, because resonance spectra provide fingerprints of different involved spin species and make it possible to distinguish different nuclear isotopes. As discussed in this chapter the nuclear magnetic resonance provides also an access to local magnetic fields acting on nuclear spins. These fields are caused by the magnetic interactions between the nuclei and by the quadrupole splittings of nuclear spin states in anisotropic crystalline environment. Manifestations of spin resonance in optical responses of semiconductors–that is, optically detected magnetic resonance–are discussed.


2014 ◽  
Vol 10 (10) ◽  
pp. 725-730 ◽  
Author(s):  
Jack Hansom ◽  
Carsten H. H. Schulte ◽  
Claire Le Gall ◽  
Clemens Matthiesen ◽  
Edmund Clarke ◽  
...  

2000 ◽  
Vol 12 (13) ◽  
pp. 2945-2952 ◽  
Author(s):  
Gennady P Berman ◽  
David K Campbell ◽  
Gary D Doolen ◽  
Kirill E Nagaev

2018 ◽  
Vol 122 (46) ◽  
pp. 26713-26721 ◽  
Author(s):  
David Beke ◽  
Anna Fučíková ◽  
Tibor Z. Jánosi ◽  
Gyula Károlyházy ◽  
Bálint Somogyi ◽  
...  

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