scholarly journals Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice

2020 ◽  
Vol 6 (7) ◽  
pp. eaay5225 ◽  
Author(s):  
Basudev Pradhan ◽  
Sonali Das ◽  
Jinxin Li ◽  
Farzana Chowdhury ◽  
Jayesh Cherusseri ◽  
...  

Organic-inorganic halide perovskite quantum dots (PQDs) constitute an attractive class of materials for many optoelectronic applications. However, their charge transport properties are inferior to materials like graphene. On the other hand, the charge generation efficiency of graphene is too low to be used in many optoelectronic applications. Here, we demonstrate the development of ultrathin phototransistors and photonic synapses using a graphene-PQD (G-PQD) superstructure prepared by growing PQDs directly from a graphene lattice. We show that the G-PQDs superstructure synchronizes efficient charge generation and transport on a single platform. G-PQD phototransistors exhibit excellent responsivity of 1.4 × 108 AW–1 and specific detectivity of 4.72 × 1015 Jones at 430 nm. Moreover, the light-assisted memory effect of these superstructures enables photonic synaptic behavior, where neuromorphic computing is demonstrated by facial recognition with the assistance of machine learning. We anticipate that the G-PQD superstructures will bolster new directions in the development of highly efficient optoelectronic devices.

Nanoscale ◽  
2021 ◽  
Author(s):  
Sisi Wang ◽  
Liang Du ◽  
Selin Donmez ◽  
Yan Xin ◽  
Hedi Mattoussi

Colloidal lead halide perovskite quantum dots (PQDs) are relatively new semiconductor nanocrystals with great potential for use in optoelectronic applications.


Catalysts ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 957
Author(s):  
ChaeHyun Lee ◽  
Soo Jeong Lee ◽  
YeJi Shin ◽  
Yeonsu Woo ◽  
Sung-Hwan Han ◽  
...  

Making high-quality raw materials is the key to open the versatile potential of next generation materials. All-inorganic CsPbX3 (X: Cl−, Br−, and/or I−) perovskite quantum dots (PQDs) have been applied in various optoelectronic devices, such as photocatalysis, hydrogen evolution, solar cells, and light-emitting diodes, due to their outstanding photophysical properties, such as high photoluminescence quantum yield (PLQY), absorption cross-section, efficient charge separation, and so on. Specifically, for further improvement of the PLQY of the PQDs, it is essential to diminish the non-radiative charge recombination processes. In this work, we approached two ways to control the non-radiative charge recombination processes through synthetic and post-synthetic processes. Firstly, we proposed how refinement of the conventional recrystallization process for PbI2 contributes to higher PLQY of the PQDs. Secondly, after halide exchange from CsPbI3 PQDs to CsPbBr3, through an in situ spectroelectrochemical setup, we monitored the positive correlation between bromide deposition of on the surface of the perovskite and photoluminescence improvement of the CsPbBr3 perovskite film through electrodeposition. These two strategies could provide a way to enhance the photophysical properties of the perovskites for application to various perovskite-based optoelectronic devices.


Author(s):  
Lin Yang ◽  
Bowen Fu ◽  
Xu Li ◽  
Hao Chen ◽  
Lili Li

All inorganic perovskite quantum dots (QDs) have received great attention owing to their excellent performance in optoelectronic applications. However, they often suffer from the defect-related photoluminescence (PL) quenching and phase...


Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 419
Author(s):  
Saradh Prasad ◽  
Mamduh J. Aljaafreh ◽  
Mohamad S. AlSalhi ◽  
Abeer Alshammari

The notable photophysical characteristics of perovskite quantum dots (PQDs) (CsPbBr3) are suitable for optoelectronic devices. However, the performance of PQDs is unstable because of their surface defects. One way to address the instability is to passivate PQDs using different organic (polymers, oligomers, and dendrimers) or inorganic (ZnS, PbS) materials. In this study, we performed steady-state spectroscopic investigations to measure the photoluminescence (PL), absorption (A), transmission (T), and reflectance (R) of perovskite quantum dots (CsPbBr3) and ethylene vinyl acetate/terpene phenol (1%) (EVA-TPR (1%), or EVA) copolymer/perovskite composites in thin films with a thickness of 352 ± 5 nm. EVA is highly transparent because of its large band gap; furthermore, it is inexpensive and easy to process. However, the compatibility between PQDs and EVA should be established; therefore, a series of analyses was performed to compute parameters, such as the band gap, the coefficients of absorbance and extinction, the index of refractivity, and the dielectric constant (real and imaginary parts), from the data obtained from the above investigation. Finally, the optical conductivities of the films were studied. All these analyses showed that the EVA/PQDs were more efficient and stable both physically and optically. Hence, EVA/PQDs could become copolymer/perovskite active materials suitable for optoelectronic devices, such as solar cells and perovskite/polymer light-emitting diodes (PPLEDs).


Author(s):  
Junke Jiang ◽  
Feng Liu ◽  
Qing Shen ◽  
Shuxia Tao

Narrow-bandgap CsSnxPb1-xI3 perovskite quantum dots (QDs) show great promise for optoelectronic applications owing to their reduced use of toxic Pb, improved phase stability, and tunable band gaps in the visible...


2016 ◽  
Vol 55 (48) ◽  
pp. 15012-15016 ◽  
Author(s):  
Meiying Leng ◽  
Zhengwu Chen ◽  
Ying Yang ◽  
Zha Li ◽  
Kai Zeng ◽  
...  

Author(s):  
Feng Liu ◽  
Junke Jiang ◽  
Taro Toyoda ◽  
Muhammad Akmal Kamarudin ◽  
Shuzi Hayase ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Long Hu ◽  
Qian Zhao ◽  
Shujuan Huang ◽  
Jianghui Zheng ◽  
Xinwei Guan ◽  
...  

AbstractAll-inorganic CsPbI3 perovskite quantum dots have received substantial research interest for photovoltaic applications because of higher efficiency compared to solar cells using other quantum dots materials and the various exciting properties that perovskites have to offer. These quantum dot devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. We demonstrate higher mechanical endurance of quantum dot films compared to bulk thin film and highlight the importance of further research on high-performance and flexible optoelectronic devices using nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial architecture consisting of CsPbI3 quantum dot/PCBM heterojunction, enabling an energy cascade for efficient charge transfer and mechanical adhesion. The champion CsPbI3 quantum dot solar cell has an efficiency of 15.1% (stabilized power output of 14.61%), which is among the highest report to date. Building on this strategy, we further demonstrate a highest efficiency of 12.3% in flexible quantum dot photovoltaics.


2021 ◽  
Vol 545 ◽  
pp. 149003
Author(s):  
Shengnan Ni ◽  
Haijun Qin ◽  
Jianfeng Wen ◽  
Xinyu Li ◽  
Ming Li ◽  
...  

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