scholarly journals A simple electron counting model for half-Heusler surfaces

2018 ◽  
Vol 4 (6) ◽  
pp. eaar5832 ◽  
Author(s):  
Jason K. Kawasaki ◽  
Abhishek Sharan ◽  
Linda I. M. Johansson ◽  
Martin Hjort ◽  
Rainer Timm ◽  
...  
Keyword(s):  
Electron Counting ◽  
Counting Model

Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study

2018 ◽  
Vol 17 (1) ◽  
pp. 140-146 ◽  
Author(s):  
Nian-Ke Chen ◽  
Xian-Bin Li ◽  
Xue-Peng Wang ◽  
Sheng-Yi Xie ◽  
Wei Quan Tian ◽  
...  
Keyword(s):  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Electron Counting ◽  
Model Study ◽  
Counting Model

Metallic III-V (001) Surfaces: Violations of the Electron Counting Model

1997 ◽  
Vol 79 (4) ◽  
pp. 693-696 ◽  
Author(s):  
L. J. Whitman ◽  
P. M. Thibado ◽  
S. C. Erwin ◽  
B. R. Bennett ◽  
B. V. Shanabrook
Keyword(s):  
Electron Counting ◽  
Counting Model

Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study” [Jan 18 140-146]

2018 ◽  
Vol 17 (3) ◽  
pp. 614-614
Author(s):  
Nian-Ke Chen ◽  
Xian-Bin Li ◽  
Xue-Peng Wang ◽  
Sheng-Yi Xie ◽  
Wei Quan Tian ◽  
...  
Keyword(s):  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Electron Counting ◽  
Model Study ◽  
Counting Model

scholarly journals Bismuth-stabilizedc(2×6)reconstruction on a InSb(100) substrate: Violation of the electron counting model

2010 ◽  
Vol 81 (3) ◽  
Author(s):  
P. Laukkanen ◽  
M. P. J. Punkkinen ◽  
N. Räsänen ◽  
M. Ahola-Tuomi ◽  
M. Kuzmin ◽  
...  
Keyword(s):  
Electron Counting ◽  
Counting Model

Work function of GaAs (001) surface obtained by the electron counting model

2001 ◽  
Vol 227-228 ◽  
pp. 123-126 ◽  
Author(s):  
N Inoue ◽  
T Higashino ◽  
K Tanahashi ◽  
Y Kawamura
Keyword(s):  
Work Function ◽  
Electron Counting ◽  
Counting Model

Formation of ZnSe/GaAs Heterovalent Heterostructures by Movpe

1996 ◽  
Vol 448 ◽  
Author(s):  
Mitsuru Funato ◽  
Satoshi Aoki ◽  
Shizυo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Vapor Phase ◽  
Photoemission Spectroscopy ◽  
Interface Formation ◽  
Interface Composition ◽  
X Ray ◽  
Precise Control ◽  
Electron Counting ◽  
Atomically Flat ◽  
Counting Model ◽  
Artificial Control

AbstractZnSe/GaAs (001) heterovalent heteгostructures are fabricated by metalorganic vapor phase epitaxy. During the growth, both GaAs and ZnSe surfaces are kept atomically flat to achieve precise control of the interface formation. Interface composition, Ga/As, are controlled by means of either Zn or Se treatment of a GaAs surface, and then ZnSe growth follows. Consequently, it is revealed by X-ray photoemission spectroscopy (XPS) that artificial control of Ga/As from 1.0 to 2.8 leads to the variation of valence band offsets from 0.6 to 1.1 eV. Based on the electron counting model and layer-attenuation model, it is proposed that the As plane just below the interface consists of As, anti-site Ga and As vacancy.

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