A wideband tonpilz transducer with a transverse through-hole in the radiating head

2021 ◽  
Vol 150 (4) ◽  
pp. 2655-2663
Author(s):  
Xiping He ◽  
Xingmin Zhu ◽  
Zihao Wu ◽  
Xiaoyan Kang ◽  
Yanjun Wang
Keyword(s):  
Through Hole

Copper-Filled Through-Hole Electrode of a ZnS Window Material for Sealing a Thermal Infrared Sensor

2010 ◽  
Vol 130 (9) ◽  
pp. 437-442
Author(s):  
Takafumi Fukumoto ◽  
Naoki Okamoto ◽  
Yoshimi Ohta ◽  
Yasuhiro Fukuyama ◽  
Masaki Hirota ◽  
...  
Keyword(s):  
Thermal Infrared ◽  
Infrared Sensor ◽  
Window Material ◽  
Through Hole

RF Characteristics of Through-Hole Interconnections Filled with Au-Sn Solder

2006 ◽  
Vol 126 (12) ◽  
pp. 649-654 ◽  
Author(s):  
Satoshi Yamamoto ◽  
Kohei Matsumaru ◽  
Tatsuo Suemasu
Keyword(s):  
Through Hole

Basic Properties of an Ultrasonic Probe with a Through Hole for Puncture and Detection Principle of a Puncture Needle

2012 ◽  
Vol 132 (11) ◽  
pp. 420-424 ◽  
Author(s):  
Yuusuke Tanaka ◽  
Katsuhiko Tanaka ◽  
Susumu Sugiyama ◽  
Hisanori Shiomi ◽  
Yoshimasa Kurumi ◽  
...  
Keyword(s):  
Ultrasonic Probe ◽  
Basic Properties ◽  
Puncture Needle ◽  
Through Hole ◽  
Detection Principle

Failure Localization of Intermittent Short Failures Caused by Vertical Conductive Anodic Filament Formation

2014 ◽  
Author(s):  
Daniel Nuez ◽  
Phoumra Tan
Keyword(s):  
Glass Fibers ◽  
Vertical Plane ◽  
Axis Formation ◽  
Metal Trace ◽  
Conductive Anodic Filament ◽  
Plated Through Hole ◽  
Voltage Gradients ◽  
Ic Package ◽  
Through Hole ◽  
Failure Localization

Abstract Conductive anodic filament (CAF) formation is a mechanism caused by an electrochemical migration of metals from a metal trace in ICs or in PCBs. This is commonly caused by the moisture build-up in the affected metal terminals in an IC package or PC board caused by critical temperature, high humidity and high voltage gradients conditions. This phenomenon is known to have caused catastrophic field failures on various OEMs electronic components in the past [1,7]. Most published articles on CAF described the formation of the filament in a lateral formation through the glass fiber interfaces between two adjacent metal planes [1-6, 8-12]. One common example is the CAF formation seen between PTH (Plated through Hole) in the laminated substrate with two different potentials causing shorts [1-6, 8-12]. In this paper, the Cu filament grows in a vertical fashion (z-axis formation) creating a vertical plane shorts between the upper and lower metal terminals in a laminated IC package substrate. The copper growth migration does not follow the fiber strands laterally or vertically through them. Instead, it grows through the stress created gaps between the impregnated carbon epoxy fillers from the upper metal trace to the lower metal trace with two different potentials, between the glass fibers. This vertical CAF mechanism creates a low resistive short that was sometimes found to be intermittent in nature. This paper presents some successful failure analysis approaches used to isolate and detect the failure locations for this type of failing devices. This paper also exposes the unique physical appearance of the vertical CAF formation.

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