MEMS microphone based on the membrane with bias voltage and FET (field effect transistor) mechano-electrical transduction

2018 ◽  
Vol 144 (3) ◽  
pp. 1701-1702 ◽  
Author(s):  
Junsoo Kim ◽  
Hoontaek Lee ◽  
Chayeong Kim ◽  
Donghwan Seo ◽  
Kumjae Shin ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Mems Microphone ◽  
Effect Transistor

scholarly journals A Modeling and Feasibility Study of a Micro-Machined Microphone Based on a Field-Effect Transistor and an Electret for a Low-Frequency Microphone

Sensors ◽  
2020 ◽  
Vol 20 (19) ◽  
pp. 5554
Author(s):  
Kumjae Shin ◽  
Chayeong Kim ◽  
Min Sung ◽  
Junsoo Kim ◽  
Wonkyu Moon
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Frequency Region ◽  
Flat Band ◽  
Experimental Investigations ◽  
Band Frequency ◽  
Frequency Sound ◽  
Mems Microphone ◽  
Effect Transistor

Miniaturized capacitive microphones often show sensitivity degradation in the low-frequency region due to electrical and acoustical time constants. For low-frequency sound detection, conventional systems use a microphone with a large diaphragm and a large back chamber to increase the time constant. In order to overcome this limitation, an electret gate on a field-effect transistor (ElGoFET) structure was proposed, which is the field-effect transistor (FET) mounted diaphragm faced on electret. The use of the sensing mechanism consisting of the integrated FET and electret enables the direct detection of diaphragm displacement, which leads its acoustic senor application (ElGoFET microphone) and has a strong ability to detect low-frequency sound. We studied a theoretical model and design for low-frequency operation of the ElGoFET microphone prototype. Experimental investigations pertaining to the design, fabrication, and acoustic measurement of the microphone were performed and the results were compared to our analytical predictions. The feasibility of the microphone as a low-frequency micro-electromechanical system (MEMS) microphone, without the need for a direct current bias voltage (which is of particular interest for applications requiring miniaturized components), was demonstrated by the flat-band frequency response in the low-frequency region.

A micromachined microphone based on the membrane with bias voltage and field-effect-transistor mechano-electrical transduction

2017 ◽  
Vol 142 (4) ◽  
pp. 2567-2567
Author(s):  
Junsoo Kim ◽  
Hoontaek Lee ◽  
Donghwan Seo ◽  
Jaehyeok Jin ◽  
Kumjae Shin ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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