A micromachined low frequency microphone based on a field effect transistor and an electret

2016 ◽  
Vol 140 (4) ◽  
pp. 3033-3033 ◽  
Author(s):  
Kumjae Shin ◽  
Junsoo Kim ◽  
Hoonteak Lee ◽  
Donghwan Seo ◽  
Wonkyu Moon
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Effect Transistor

Design of Pentacene-Based Organic Field-Effect Transistor for Low-Frequency Operational Transconductance Amplifier

2020 ◽  
Vol 29 (11) ◽  
pp. 2050181
Author(s):  
Cross T. Asha Wise ◽  
G. R. Suresh ◽  
M. Palanivelen ◽  
S. Saraswathi
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Low Frequency ◽  
Oxide Semiconductor ◽  
Operational Transconductance Amplifier ◽  
Text Type ◽  
Transconductance Amplifier ◽  
Effect Transistor

Mounting electronics circuits on a plastic flexible substrate are pertinent for biosensing applications due to their resilient nature, minimal processing conditions, lightweight and low cost. Organic Field-Effect Transistors (OFET)-based amplifier for flexible biosensors have been proposed in this paper. To design flexible biosensing circuits, Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with Polycyclic Hydrocarbon is a suitable choice. It is a big challenge to build an organic circuit using graphene electrode due to its poor performance of [Formula: see text]-type OFET, therefore it is advisable to use Pentacene as [Formula: see text]- and [Formula: see text]-type Organic semiconductors. Pentacene being one among the foremost totally investigated conjugated organic molecules with a high application potential because the hole mobility in OFETs goes up to 0.2[Formula: see text]cm2/(Vs), which exceeds that of amorphous silicon. In biosignal process, the first and most important step is to amplify the biosignal for further processing. Operational Transconductance Amplifier (OTA) plays an essential role in biological signal measuring instruments like EEG, ECG, EMG modules which measure the heart, muscle and brain activities. The OTA designed using this OFET is adaptable for flexible sensor circuits and also it derives the transconductance of 67 which is similar to silicon OTA. The amplifier designed here gives unit gain of 42[Formula: see text]dB with a frequency of 195[Formula: see text]Hz which is suitable for low-frequency biosignal processing applications.

Low frequency effects of surface states on 4H-SiC metal-semiconductor field effect transistor

2003 ◽  
Vol 12 (4) ◽  
pp. 389-393
Author(s):  
Yang Lin-An ◽  
Yu Chun-Li ◽  
Zhang Yi-Men ◽  
Zhang Yu-Ming
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Surface States ◽  
Frequency Effects ◽  
Effect Transistor

Temperature Dependence of Low Frequency Noise in Silicon on Insulator Tunneling Field Effect Transistor

2020 ◽  
Vol 20 (8) ◽  
pp. 4699-4703
Author(s):  
Hyun-Dong Song ◽  
Hyeong-Sub Song ◽  
Sunil Babu Eadi ◽  
Hyun-Woong Choi ◽  
Ga-Won Lee ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Drain Current ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Increase With Increase ◽  
Effect Transistor ◽  
Insulator Substrate

In this work, noise mechanism of a tunneling field-effect transistor (TFET) on a silicon-on-insulator substrate was studied as a function of temperature. The results show that the drain current and subthreshold slope increase with increase in temperature. This temperature dependence is likely caused by the generation of greater current flow owing to decreased silicon band gap and leakage. Further, the TFET noise decreases with increase in temperature. Therefore, the effective tunneling length between the source and the channel appears to decrease and Poole–Frenkel tunneling occurs.

Modal Analysis and Design of a Vertically Movable Gate Field Effect Transistor (VMGFET) Proposed for Low-Frequency Sensing Applications

2012 ◽  
Vol 268-270 ◽  
pp. 1538-1543
Author(s):  
Justin Williams ◽  
William B.D. Forfang ◽  
Byoung Hee You ◽  
In Hyouk Song
Keyword(s):  
Modal Analysis ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Free Vibrations ◽  
Element Analysis ◽  
Analysis And Design ◽  
Sensing Applications ◽  
Gate Structure ◽  
Effect Transistor

The objective of this study is to design and optimize a vertically movable gate field effect transistor (VMGFET) - suitable for low-frequency, high-sensitivity applications - with an emphasis on modal analysis of the suspended gate structure, optimization of mesh density within the employed finite element analysis software, and optimization of the moveable gate dimensions given its relationship with fabrication complexity and the structure’s resonant frequencies. The methods of design, optimization, and analysis were carried out with COMSOL Multiphysics 4.2a under the assumption of no damping with free vibrations. The results indicate optimal dimensions of the suspended gate structure - given constraints on size, resonance, and fabrication complexity - which suggest a beam thickness of 3 µm and a beam width of 15 µm, yielding an upper limit of input force frequencies near 2 kHz.

TRANSPORT AND NOISE FEATURES IN AlGaN/GaN FIELD EFFECT TRANSISTOR WITH NANOMETER-SCALING GATE LENGTH

2005 ◽  
Vol 04 (05n06) ◽  
pp. 1001-1006
Author(s):  
S. A. VITUSEVICH ◽  
M. V. PETRYCHUK ◽  
S. V. DANYLYUK ◽  
A. M. KURAKIN ◽  
N. KLEIN ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Frequency Noise ◽  
Gate Length ◽  
Conducting Channel ◽  
Extended Range ◽  
Effect Transistor

The study of low frequency noise in nanoscale gate HEMT structures (L SD /L G >10) has been carried out. Deviation from 1/f dependence has been observed in extended range of frequency and one becomes more pronounced with increase of gate voltage. It is shown that main contribution to the noise stems from the region under the gate and adjacent parts of source-to-gate and gate-to-drain regions. The features observed in the carrier transport and noise spectra are explained within a model based on dynamic redistribution of the electric field along the conducting channel.

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