Surface waves above thin porous layers saturated by air at ultrasonic frequencies

Luc Kelders; Walter Lauriks; Jean F. Allard

doi:10.1121/1.423333

Surface waves above thin porous layers saturated by air at ultrasonic frequencies

The Journal of the Acoustical Society of America ◽

10.1121/1.423333 ◽

1998 ◽

Vol 104 (2) ◽

pp. 882-889 ◽

Cited By ~ 22

Author(s):

Luc Kelders ◽

Walter Lauriks ◽

Jean F. Allard

Keyword(s):

Surface Waves ◽

Porous Layers

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Surface waves above thin porous layers and periodic structures

The Journal of the Acoustical Society of America ◽

10.1121/1.426546 ◽

1999 ◽

Vol 105 (2) ◽

pp. 1385-1385 ◽

Cited By ~ 1

Author(s):

Walter Lauriks ◽

Luc Kelders ◽

Jean François Allard

Keyword(s):

Surface Waves ◽

Periodic Structures ◽

Porous Layers

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Pseudo-surface waves above thin porous layers (L)

The Journal of the Acoustical Society of America ◽

10.1121/1.1778904 ◽

2004 ◽

Vol 116 (3) ◽

pp. 1345-1347 ◽

Cited By ~ 3

Author(s):

Jean F. Allard ◽

Michel Henry ◽

Vincent Gareton

Keyword(s):

Surface Waves ◽

Porous Layers

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In Situ microscopy of the anodic etching of silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137537 ◽

1995 ◽

Vol 53 ◽

pp. 232-233

Author(s):

Frances M. Ross ◽

Peter C. Searson

Keyword(s):

Composite Structures ◽

High Surface ◽

High Surface Area ◽

Chemical Properties ◽

Selective Etching ◽

Silicon On Insulator ◽

Second Phase ◽

Porous Layers ◽

New Class ◽

Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

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